C3M0016120K

VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch TAB Drain 1 234 D SSG Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C3M0016120K Package TO 247-4 Marking C3M0016120K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current 1200 -8/+19 -4/+15 115 85 ID(pulse) Pulsed Drain Current 250 PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 556 -4...