C3M0021120D

VDS 1200 V C3M0021120D ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch Part Number Package Marking C3M0021120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) TO 247-3 C3M0021120D Symbol Parameter Value Unit Test Conditions Note VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current ID(pulse) Pulsed Drain Current 1200 -8/+19 -4/+15 100 74 200 V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V Static VGS = 15 V, TC = 25˚C A VGS = 15 V, TC = 100˚C A Pulse width tP limited by Tjmax Note 1 Note 2 Fig. 19 PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 469 -40 to +1...