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VS-T70HF10 Dataheets PDF



Part Number VS-T70HF10
Manufacturers Vishay
Logo Vishay
Description Power Rectifiers Diodes
Datasheet VS-T70HF10 DatasheetVS-T70HF10 Datasheet (PDF)

VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series www.vishay.com Vishay Semiconductors Power Rectifiers Diodes (T-modules), 40 A to 110 A D-55 (T-module) PRIMARY CHARACTERISTICS IF(AV) Type 40 A to 110 A Modules - diode, high voltage VRRM Package 100 V to 1200 V D-55 (T-module) Circuit configuration Single diode FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capabi.

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VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series www.vishay.com Vishay Semiconductors Power Rectifiers Diodes (T-modules), 40 A to 110 A D-55 (T-module) PRIMARY CHARACTERISTICS IF(AV) Type 40 A to 110 A Modules - diode, high voltage VRRM Package 100 V to 1200 V D-55 (T-module) Circuit configuration Single diode FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF IF(AV) IF(RMS) IFSM TC 50 Hz 60 Hz 40 85 63 570 600 50 Hz I2t 60 Hz I2t 1630 1500 16 300 VRRM TJ T70HF T85HF 70 85 85 85 110 134 1200 1700 1250 1800 7100 14 500 6450 13 500 70 700 148 700 100 to 1200 -40 to +150 T110HF 110 85 173 2000 2100 20 500 18 600 204 300 UNITS A °C A A A2s A2s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VS-T40HF... VS-T70HF... VS-T85HF... VS-T110HF... 10 20 40 60 80 100 120 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 150 300 500 700 900 1100 1300 IRRM MAXIMUM AT TJ = 25 °C μA 100 Revision: 04-May-17 1 Document Number: 93587 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IF(AV) IF(RMS) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance I2t VF(TO)1 VF(TO)2 rf1 rf2 Maximum forward voltage drop VFM TEST CONDITIONS 180° conduction, half sine wave t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms 100 % VRRM t = 8.3 ms reapplied t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum VALUES UNITS T40HF T70HF T85HF T110HF 40 70 85 110 A 85 85 85 85 °C 63 110 134 173 A 570 1200 1700 2000 600 1250 1800 480 1000 1450 2100 1700 A 500 1050 1500 1780 1630 1500 1150 7100 6450 5000 14 500 13 500 10 500 20 500 18 600 14 500 A2s 1050 4570 9600 13 200 16 300 70 700 148 700 204 300 A2s 0.66 0.76 0.68 0.84 0.95 0.90 0.68 0.86 V (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum 4.3 2.4 1.76 1.56 m 3.1 1.7 1.08 1.12 IFM =  x IF(AV), TJ = 25 °C, tp = 400 μs square pulse Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.30 1.35 1.27 1.35 V BLOCKING PARAMETER Maximum peak reverse leakage current RMS isolation voltage SYMBOL TEST CONDITIONS IRRM VISOL TJ = 150 °C 50 Hz, circuit to base, all terminals shorted TJ = 25 °C, t = 1 s T40HF T70HF T85HF T110HF UNITS 15 15 20 20 mA 3500 3500 3500 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T40HF T70HF T85HF T110HF Maximum junction operating and storage temperature range TJ, TStg -40 to +150 °C Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink RthJC RthCS DC operation Mounting surface smooth, flat and greased 1.36 0.69 0.62 0.47 K/W 0.2 Mounting torque, ± 10 % to heatsink terminals Non-lubricated threads M3.5 mounting screws (1) M5 screw terminals 1.3 ± 10 % 3 ± 10 % Nm Approximate weight See dimensions - link at the end of datasheet 54 g Case style D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound Revision: 04-May-17 2 Document Number: 93587 For technical questions within your region: [email protected].


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