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ABS20M-T Dataheets PDF



Part Number ABS20M-T
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 2A 1000V Glass Passivated Bridge Rectifier
Datasheet ABS20M-T DatasheetABS20M-T Datasheet (PDF)

ABS20M-T Taiwan Semiconductor 2A, 1000V Glass Passivated Bridge Rectifier FEATURES ● Glass passivated junction ● Ideal for automated placement ● Reliable low cost construction utilizing molded plastic technique ● High surge current capability ● UL Recognized File # E-326854 ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application MECHANICAL DATA ● C.

  ABS20M-T   ABS20M-T



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ABS20M-T Taiwan Semiconductor 2A, 1000V Glass Passivated Bridge Rectifier FEATURES ● Glass passivated junction ● Ideal for automated placement ● Reliable low cost construction utilizing molded plastic technique ● High surge current capability ● UL Recognized File # E-326854 ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application MECHANICAL DATA ● Case: ABS ● Molding compound :meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Moisture sensitivity level: level 1, per J-STD-020 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.093 g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM TJ MAX Package 2 1000 50 150 ABS A V A °C Configuration Quad ABS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ABS20M-T Marking code on the device ABS20M Repetitive peak reverse voltage Reverse voltage, total rms value VRRM VR(RMS) 1000 700 Maximum DC blocking voltage VDC 1000 Forward current On glass-epoxy Forward current On aluminum substrate Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load I2t value (of a surge on-state current) IF(AV) IFSM I2t 1.6 2.0 50 10.375 Junction temperature Storage temperature TJ TSTG -55 to +150 -55 to +150 UNIT V V V A A A2s °C °C 1 Version:B1708 ABS20M-T Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA LIMIT 30 85 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 1A, TJ = 25°C Forward voltage (1) IF = 2A, TJ = 25°C IF = 1A, TJ =125°C VF IF = 2A, TJ = 125°C Reverse current @ rated VR (2) Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms. TJ = 25°C TJ = 125°C IR TYP. 0.92 0.80 0.94 - MAX. 1.02 1.10 5 150 UNIT V V V V µA µA ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE SUFFIX ABS20M-T (Note 1, 2) RE RG G Note: 1. Whole series with green compound (halogen-free) PACKAGE ABS ABS PACKING 1,000 / 7" Plastic reel 5,000 / 13" Paper reel EXAMPLE P/N EXAMPLE P/N ABS20M-T REG PART NO. ABS20M-T PACKING CODE RE PACKING CODE SUFFIX G DESCRIPTION Green compound 2 Version:B1708 AVERAGE FORWARD CURRENT (A) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 2.5 ABS20M-T Taiwan Semiconductor Fig.2 Typical Junction Capacitance 100 JUNCTION CAPACITANCE (pF) a 2 1.5 10 1 0.5 On Aluminum substrate 0 0 25 50 75 100 125 AMBIENT TEMPERATURE (oC) 150 1 0.1 1 10 REVERSE VOLTAGE (V) 100 Fig.3 Typical Reverse Characteristics 100 Fig.4 Typical Forward Characteristics 10 10 INSTANTANEOUS FORWARD CURRENT (A) 10 TJ=125°C 1 0.1 TJ=25°C 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 0.1 1 0.01 TJ=125°C TJ=125°C TJ=25°C 0.001 0.3 0.4 0.5 0.6 0.1 0 0.2 0.4 0.6 0.7 0.8 TJ=25°CPulse width 0.8 0.9 1 1.1 1 1.2 1.4 1.6 1.2 FORWARD VOLTAGE (V) (A) INSTANTANEOUS REVERSE CURRENT (μA) 3 Version:B1708 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-repetitive Forward Surge Current 50 8.3ms Single Half Sine-Wave 40 PEAK FORWARD SURGE CURRENT (A) 30 20 10 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 ABS20M-T Taiwan Semiconductor 4 Version:B1708 PACKAGE OUTLINE DIMENSIONS ABS SUGGESTED PAD LAYOUT ABS20M-T Taiwan Semiconductor DIM. B C D E F G H I J K Unit (mm) Min. Max. 4.30 4.50 6.25 6.65 0.60 0.70 3.90 4.10 4.90 5.10 1.40 1.60 1.35 1.45 0.05 0.15 0.30 0.70 0.15 0.25 Unit (inch) Min. Max. 0.169 0.177 0.246 0.262 0.024 0.028 0.154 0.161 0.193 0.200 0.055 0.063 0.053 0.057 0.002 0.006 0.012 0.028 0.006 0.010 Symbol A B C D E F Unit (mm) 1.5 0.9 4.22 7.22 2.05 5.72 Unit (inch) 0.059 0.035 0.166 0.284 0.081 0.225 MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code 5 Version:B1708 ABS20M-T Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual prop.


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