BT151S-650R

BT151S-650R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring sensitive gate, high bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance. 2. Features and benefits High bidirectional blocking voltage capability High surge current capability High thermal cycling performance Sensitive gate Surface mountable package 3. Applications Ignition circuits Motor control Protection circuits Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 103 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tmb ≤ 103 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 8 Dynamic charateristics dVD/dt rate of rise of off-state VDM = 436 V; Tj = 125 °C; RGK = 100 Ω; voltage exponential waveform; Fig. 13 Min Typ Max Unit - - 650 V - - 7.5 A - - 12 A - - 120 A - - 132 A - - 125 °C - 2 15 mA 200 1000 - V/µs WeEn Semiconductors BT151S-650R SCR Symbol Parameter Condition...