Document
BUJD203A
NPN power transistor with integrated diode
9 October 2018
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package.
2. Features and benefits
• Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Very low switching and conduction losses
3. Applications
• DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems
4. Pinning information
Table 1. Pinning information Pin Symbol Description
Simplified outline
1 B base
mb
2 C collector
3 E emitter
mb C
mounting base; connected to collector
Graphic symbol
C
B
E sym131
123
TO-220AB (SOT78)
WeEn Semiconductors
BUJD203A
NPN power transistor with integrated diode
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUJD203A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
Version SOT78
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 October 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13
WeEn Semiconductors
BUJD203A
NPN power transistor with integrated diode
6. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
collector-emitter peak voltage
VBE = 0 V
VCBO
collector-base voltage IE = 0 A
VCEO
collector-emitter voltage IB = 0 A
IC
collector current
DC; Fig. 1; Fig. 2; Fig. 3
ICM peak collector current Fig. 1; Fig. 2; Fig. 3
IB
base current
DC
IBM peak base current
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 4
Tstg storage temperature
Tj junction temperature
Min Max Unit - 850 V
- 850 V - 425 V - 4A - 8A - 2A - 4A - 80 W -65 150 °C - 150 °C
10 IC (A)
8
6
001aac000
IBon VBB
VCC
LC VCL(CE) probe point
LB DUT
001aab999
4
2
0 0 200 400 600 800 1000 VCEclamp (V)
Tj ≤ Tj(max) °C Fig. 1. Reverse bias safe operating area
VCL(CE) ≤ 1000 V; VCC = 150 V; VBB = - 5 V; LB = 1 µH; LC = 200 µH
Fig. 2. Test circuit for reverse bias safe operating area
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 October 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13
WeEn Semiconductors
BUJD203A
NPN power transistor with integrated diode
102 IC (A) ICM(ma1x0) IC(max)
1
10- 1
001aac001
duty cycle = 0.01
II(3) tp = 20 µs (1)
50 µs 100 µs 200 µs (2) 500 µs DC
10- 2
I(3)
III(3)
10- 3 1
10 102 103 VCEclamp (V)
1) Ptot maximum and Ptot peak maximum lines 2) Second breakdown limits 3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs
Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C
120 001aab993
Pder (.