DatasheetsPDF.com

BUJD203A Dataheets PDF



Part Number BUJD203A
Manufacturers WeEn
Logo WeEn
Description NPN power transistor
Datasheet BUJD203A DatasheetBUJD203A Datasheet (PDF)

BUJD203A NPN power transistor with integrated diode 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package. 2. Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Very low switching and conduction losses 3. Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Moto.

  BUJD203A   BUJD203A



Document
BUJD203A NPN power transistor with integrated diode 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated antiparallel E-C diode in a SOT78 (TO220AB) plastic package. 2. Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Very low switching and conduction losses 3. Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol C B E sym131 123 TO-220AB (SOT78) WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 5. Ordering information Table 2. Ordering information Type number Package Name BUJD203A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. 9 October 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 6. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCBO collector-base voltage IE = 0 A VCEO collector-emitter voltage IB = 0 A IC collector current DC; Fig. 1; Fig. 2; Fig. 3 ICM peak collector current Fig. 1; Fig. 2; Fig. 3 IB base current DC IBM peak base current Ptot total power dissipation Tmb ≤ 25 °C; Fig. 4 Tstg storage temperature Tj junction temperature Min Max Unit - 850 V - 850 V - 425 V - 4A - 8A - 2A - 4A - 80 W -65 150 °C - 150 °C 10 IC (A) 8 6 001aac000 IBon VBB VCC LC VCL(CE) probe point LB DUT 001aab999 4 2 0 0 200 400 600 800 1000 VCEclamp (V) Tj ≤ Tj(max) °C Fig. 1. Reverse bias safe operating area VCL(CE) ≤ 1000 V; VCC = 150 V; VBB = - 5 V; LB = 1 µH; LC = 200 µH Fig. 2. Test circuit for reverse bias safe operating area BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. 9 October 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 WeEn Semiconductors BUJD203A NPN power transistor with integrated diode 102 IC (A) ICM(ma1x0) IC(max) 1 10- 1 001aac001 duty cycle = 0.01 II(3) tp = 20 µs (1) 50 µs 100 µs 200 µs (2) 500 µs DC 10- 2 I(3) III(3) 10- 3 1 10 102 103 VCEclamp (V) 1) Ptot maximum and Ptot peak maximum lines 2) Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C 120 001aab993 Pder (.


Z0109NN BUJD203A BYC10DX-600


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)