TC4953ES

SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), [email protected], Ids@-3A = 85mΩ@TYP RDS(ON), [email protected], Ids@-3A = 110mΩ@TYP  CMOS  ESD ，HBM>6kV  ，Vgs(th)=-0.6V (TA = 25℃，) ：：。 VDS1 VDS2 VGS VDS1 ID1 ID2 TJ, Tstg www.superchip.cn 13 -10 -10 -5 -10 -3 -3 -50 to 150 V A ℃ Version 1.1 SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS BVDSS1 VGS = 0V, ID = -250uA -8 -- -10 V BVDSS2 VGS = 0V, ID = -250uA -8 -- -10 V RDS1(on) VGS1 = -4.5V, ID1 = -2A,S1=S2=0V -- 85 110.0 RDS2(on) VGS2 = -4.5V, ID2 = -2A,S1=S2=0V -- 85 110.0 mΩ RDS1(on) VGS1 = -2.5V, ID1 = -2A,S1=S2=0V -- 110.0 140.0 RDS2(on) VGS2 = -2.5V, ID2 = -2A,S1=S2=0V -- 110.0 140.0 VGS1(th) VDS1 = VGS1, ID = -250uA VGS2(th) VDS2 = VGS2, ID = -250uA IDSS1 VDS1 = -5V, VGS1 = 0V, TJ=25℃ IDSS2 VDS2 = -5V, VGS2 = 0V, TJ=25℃ -0.4 -0.6 -0.4 -0.6 -- --- -- -1 V -1 -1 uA -1 IGSS1 IGSS2 VGS1 = -5V VGS2 = -5V -- --- -- -1 uA -1 ID1 -3 A ID2 -3 Ipk1 -4 A Ipk2 -4 www.superchip.cn 23 Version 1.1 SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS SOP-8 A A1 A2 A3 b c D E E1 e L L1 θ - 1.35 0.55 0.35 0.17 4.85 5.90 3.80 0.60 0º 1.50 0.10 1.40 0.60 0.40 0.22 4.90 6.00 3.90 1.27BSC 0.65 1.05BSC 4º 1.55 0.15 1.45 0.65 0.45 0.25 4.95 6.10 4.00 0.70 6º www.superchip.cn 33 Version 1.1 ...