Document
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC114GS3
Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 1/6
Features
• Built-in bias resistors, R=10kΩ • Complements the DTA114GS3 • Pb-free lead plating and halogen-free package
Equivalent Circuit
DTC114GS3
Outline
SOT-323
R=10 kΩ B : Base C : Collector E : Emitter
Ordering Information
Device DTC114GS3-0-T1-G
Package
SOT-323 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products
Product name
DTC114GS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PD RθJA
Tj
Tstg
Limits
50 50 5 100 200 625
-55~+150
-55~+150
Unit
V V V mA mW
°C/W °C °C
Electrical Characteristics (Ta=25℃)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Emitter-Base Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
BVCBO BVCEO BVEBO
ICBO IEBO VCE(SAT) HFE
R
50 50 5 300 30
7
-
10
fT - 250
- V IC=50μA
- V IC =1mA
- V IE=720μA
500 nA VCB=50V
580 μA VEB=4V
120 mV IC =10mA, IB=0.5mA
- - VCE=5V, IC =5mA
13 kΩ -
-
MHz
VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
Recommended Soldering Footprint
DTC114GS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 3/6
Collector-Emitter Saturation Voltage--VCE(SAT)(mV)
Typical Characteristics
DC Current Gain vs Collector Current
1000 100
Ta=125°C 75°C 25°C 0°C -40°C
Collector-Emitter Saturation Voltage vs Collector Current
1000 Ta=125°C 75°C 25°C 0°C -40°C
100
Current Gain---H FE
10
1 0.1
VCE=5V Pulsed
1 10 Collector Current ---IC(mA)
100
Grounded Emitter Propagation Characteristics
100 Ta= 125°C, 75°C, 25°, 0°C, -40°C
10
10 1
250 200 150
IC/IB=20 Pulsed
10 Collector Current ---IC(mA)
Power Derating Curve
100
Power Dissipation---PD(mW)
Collector Current --- I C(mA)
1
0.1 0
VCE=5V Pulsed
0.2 0.4 0.6 0.8 Base-Emitter Voltage--- VBE(V)
1
100
50
0 0
50 100 150 Ambient Temperature --- TA(℃ )
200
DTC114GS3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 4/6
Carrier Tape Dimension
DTC114GS3
CYSte.