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DTC114GS3 Dataheets PDF



Part Number DTC114GS3
Manufacturers CYStech
Logo CYStech
Description NPN Digital Transistors
Datasheet DTC114GS3 DatasheetDTC114GS3 Datasheet (PDF)

CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114GS3 Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 1/6 Features • Built-in bias resistors, R=10kΩ • Complements the DTA114GS3 • Pb-free lead plating and halogen-free package Equivalent Circuit DTC114GS3 Outline SOT-323 R=10 kΩ B : Base C : Collector E : Emitter Ordering Information Device DTC114GS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping.

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CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114GS3 Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 1/6 Features • Built-in bias resistors, R=10kΩ • Complements the DTA114GS3 • Pb-free lead plating and halogen-free package Equivalent Circuit DTC114GS3 Outline SOT-323 R=10 kΩ B : Base C : Collector E : Emitter Ordering Information Device DTC114GS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC114GS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 2/6 Absolute Maximum Ratings (Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 50 50 5 100 200 625 -55~+150 -55~+150 Unit V V V mA mW °C/W °C °C Electrical Characteristics (Ta=25℃) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Emitter-Base Resistance Transition Frequency Symbol Min. Typ. Max. Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) HFE R 50 50 5 300 30 7 - 10 fT - 250 - V IC=50μA - V IC =1mA - V IE=720μA 500 nA VCB=50V 580 μA VEB=4V 120 mV IC =10mA, IB=0.5mA - - VCE=5V, IC =5mA 13 kΩ - - MHz VCE=10V, IC=5mA, f=100MHz* * Transition frequency of the device Recommended Soldering Footprint DTC114GS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 3/6 Collector-Emitter Saturation Voltage--VCE(SAT)(mV) Typical Characteristics DC Current Gain vs Collector Current 1000 100 Ta=125°C 75°C 25°C 0°C -40°C Collector-Emitter Saturation Voltage vs Collector Current 1000 Ta=125°C 75°C 25°C 0°C -40°C 100 Current Gain---H FE 10 1 0.1 VCE=5V Pulsed 1 10 Collector Current ---IC(mA) 100 Grounded Emitter Propagation Characteristics 100 Ta= 125°C, 75°C, 25°, 0°C, -40°C 10 10 1 250 200 150 IC/IB=20 Pulsed 10 Collector Current ---IC(mA) Power Derating Curve 100 Power Dissipation---PD(mW) Collector Current --- I C(mA) 1 0.1 0 VCE=5V Pulsed 0.2 0.4 0.6 0.8 Base-Emitter Voltage--- VBE(V) 1 100 50 0 0 50 100 150 Ambient Temperature --- TA(℃ ) 200 DTC114GS3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C649S3 Issued Date : 2017.01.04 Revised Date : 2017.02.08 Page No. : 4/6 Carrier Tape Dimension DTC114GS3 CYSte.


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