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DTC114WS3 Dataheets PDF



Part Number DTC114WS3
Manufacturers CYStech
Logo CYStech
Description NPN Digital Transistors
Datasheet DTC114WS3 DatasheetDTC114WS3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C354S3 Issued Date : 2002.06.01 Revised Date : 2002.11.04 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114WS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost complete.

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CYStech Electronics Corp. Spec. No. : C354S3 Issued Date : 2002.06.01 Revised Date : 2002.11.04 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114WS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114WS3 Equivalent Circuit DTC114WS3 SOT-323 R1=10kΩ , R2=4.7 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Symbol Vcc Vin Io Io(max.) Pd Tj Tstg DTC114WS3 Limits 50 -10~+30 100 100 200 150 -55~+150 Unit V V mA mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C354S3 Issued Date : 2002.06.01 Revised Date : 2002.11.04 Page No. : 2/4 Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Vi(off) Vi(on) Vo(on) Ii Io(off) Gi R1 R2/R1 fT Min. 3 24 7 0.37 - Typ. 0.1 0 10 0.47 250 Max. 0.8 - 0.3 0.88 0.5 13 0.57 - Unit V V V mA uA - kΩ MHz Test Conditions Vcc=5V, Io=100uA Vo=0.3V, Io=2mA Io/Ii=10mA/0.5mA Vi=5V Vcc=50V, Vi=0V Vo=5V, Io=10mA Vce=10V, Ie=5mA, f=100MHz* * Transition frequency of the device Characteristic Curves DC Current Gain vs Output Current 1000 Output Voltage vs Output Current 1000 Output Voltage---Vo(on)(mV) Current Gain---HFE 100 10 1 Vo=5V 10 Output Current ---Io(mA) 100 Input Voltage vs Output Current (ON Characteristics) 10 Vo=0.3V Input Voltage --- Vi(on)(V) 1 0.1 DTC114WS3 1 10 Output Current --- Io(mA) 100 Output Current --- Io(mA) 100 10 1 Io/Ii=20 10 Output Current ---Io(mA) 100 Output Current vs Input Voltage (OFF Characteristics) 100 Vcc=5V 10 1 0.1 0.1 1 Input Voltage --- Vi(off)(V) 10 CYStek Product Specification Power Dissipation---PD(mW) CYStech Electronics Corp. 250 200 150 100 50 0 0 PD - Ta 50 100 150 Ambient Temperature ---Ta(℃ ) 200 Spec. No. : C354S3 Issued Date : 2002.06.01 Revised Date : 2002.11.04 Page No. : 3/4 DTC114WS3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C354S3 Issued Date : 2002.06.01 Revised Date : 2002.11.04 Page No. : 4/4 3 1 e1 bp e D A A1 QC 2 WB Lp detail Z EA Z θ He 01 2 mm scale vA Marking: T8EW 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Base 2.Emitter 3.Collector DIM Inches Min. Max. A 0.0315 0.0433 A1 0.0000 0.0039 bp 0.0118 0.0157 C 0.0039 0.0098 D 0.0709 0.0866 E 0.0453 0.0531 e 0.0512 - Millimeter.


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