DatasheetsPDF.com

DTC114YK8S3 Dataheets PDF



Part Number DTC114YK8S3
Manufacturers CYStech
Logo CYStech
Description NPN Digital Transistors
Datasheet DTC114YK8S3 DatasheetDTC114YK8S3 Datasheet (PDF)

CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114YK8S3 Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 1/6 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating.

  DTC114YK8S3   DTC114YK8S3


Document
CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114YK8S3 Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 1/6 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114YK8S3. • ESD protection diode is built-in. • Pb-free lead plating and halogen-free package. Equivalent Circuit DTC114YK8S3 Outline SOT-323 R1=10kΩ , R2=47 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Ordering Information Device DTC114YK8S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC114YK8S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Supply Voltage Input Voltage Parameter Output Current Power Dissipation Thermal Resistance, Junction to Ambient ESD susceptibility Junction Temperature Storage Temperature Symbol VCC VI IO IO(max.) Pd RθJA VESD Tj Tstg Limits 50 -6~+40 70 100 150 833 8000 150 -55~+150 Unit V V mA mA mW °C/W V °C °C Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Min. Typ. Max. Unit Test Conditions Vi(off) - - 0.3 V Vcc=5V, Io=100uA Vi(on) 3 - - V Vo=0.3V, Io=1mA Vo(on) - 0.1 0.3 V Io/Ii=5mA/0.25mA Ii - - 0.88 mA Vi=5V Io(off) - - 0.5 uA Vcc=50V, Vi=0V Gi 68 - - - Vo=5V, Io=5mA R1 7 10 13 kΩ - R2/R1 3.7 4.7 5.7 - - fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Recommended Soldering Footprint DTC114YK8S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 3/6 Typical Characteristics DC Current Gain vs Output Current 1000 Output Voltage vs Output Current 1000 Output Voltage---Vo(on)(mV) Current Gain---HFE Input Voltage --- Vi(on)(V) 100 Vo=5V 10 1 10 Output Current ---Io(mA) 100 Input Voltage vs Output Current (ON Characteristics) 10 Vo=0.3V 1 100 Io/Ii=20 10 1 10 Output Current ---Io(mA) 100 Output Current vs Input Voltage (OFF Characteristics) 100 Vcc=5V 10 1 Output Current --- Io(mA) 0.1 0.1 160 140 120 100 80 60 40 20 0 0 1 10 Output Current --- Io(mA) Power Derating Curve 100 50 100 150 Ambient Temperature --- Ta(℃ ) 200 0.1 0.1 1 Input Voltage --- Vi(off)(V) 10 Power Dissipation---PD(mW) DTC114YK8S3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 4/6 Carrier Tape Dimension DTC114YK8S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 5/6 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC114YK8S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 6/6 □□ 3 1 e1 bp e D A A1 Q C 2 WB Lp detail Z EA Z Marking: Device Code 8DTZE Date Code θ He 01 2 mm scale vA 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Base 2.Emitter 3.Collector DIM Inches Min. Max. Millimeters Min. Max. DIM Inches Min. Max. *: Typical Millimeters Min. Max. A 0.0315 0.0433 0.80 1.10 e1 0.0256* 0.65* A1 0.0000 0.0039 0.00 0.10 He 0.0846 0.0965 2..


DTC114WS3 DTC114YK8S3 RM48L930


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)