Document
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC114YK8S3
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 1/6
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114YK8S3. • ESD protection diode is built-in. • Pb-free lead plating and halogen-free package.
Equivalent Circuit
DTC114YK8S3
Outline
SOT-323
R1=10kΩ , R2=47 kΩ IN(B) : Base
OUT(C) : Collector GND(E) : Emitter
Ordering Information
Device DTC114YK8S3-0-T1-G
Package
Shipping
SOT-323 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC114YK8S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Supply Voltage Input Voltage
Parameter
Output Current
Power Dissipation Thermal Resistance, Junction to Ambient ESD susceptibility Junction Temperature
Storage Temperature
Symbol
VCC VI IO IO(max.) Pd RθJA VESD Tj Tstg
Limits
50 -6~+40
70 100 150 833 8000 150
-55~+150
Unit
V V mA mA mW °C/W V °C °C
Electrical Characteristics (Ta=25°C)
Parameter
Input Voltage
Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
Vi(off) -
- 0.3 V Vcc=5V, Io=100uA
Vi(on) 3 - - V Vo=0.3V, Io=1mA
Vo(on) - 0.1 0.3 V Io/Ii=5mA/0.25mA
Ii - - 0.88 mA Vi=5V
Io(off) -
- 0.5 uA Vcc=50V, Vi=0V
Gi 68 - - - Vo=5V, Io=5mA
R1 7 10 13 kΩ -
R2/R1 3.7 4.7 5.7 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
DTC114YK8S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 3/6
Typical Characteristics
DC Current Gain vs Output Current 1000
Output Voltage vs Output Current 1000
Output Voltage---Vo(on)(mV)
Current Gain---HFE
Input Voltage --- Vi(on)(V)
100 Vo=5V
10 1
10 Output Current ---Io(mA)
100
Input Voltage vs Output Current (ON Characteristics) 10
Vo=0.3V
1
100
Io/Ii=20
10 1
10 Output Current ---Io(mA)
100
Output Current vs Input Voltage (OFF Characteristics) 100
Vcc=5V 10
1
Output Current --- Io(mA)
0.1 0.1
160 140 120 100
80 60 40 20
0 0
1 10 Output Current --- Io(mA)
Power Derating Curve
100
50 100 150 Ambient Temperature --- Ta(℃ )
200
0.1 0.1
1 Input Voltage --- Vi(off)(V)
10
Power Dissipation---PD(mW)
DTC114YK8S3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 4/6
Carrier Tape Dimension
DTC114YK8S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100°C 150°C 60-120 seconds
150°C 200°C 60-180 seconds
Time maintained above:
−Temperature (TL) − Time (tL)
183°C 60-150 seconds
217°C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC114YK8S3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C355S3 Issued Date : 2016.01.27 Revised Date : 2016.07.18 Page No. : 6/6
□□
3
1 e1 bp
e D
A
A1
Q C
2
WB
Lp
detail Z
EA Z
Marking:
Device Code
8DTZE
Date Code
θ
He
01
2 mm
scale
vA
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
Style: Pin 1.Base 2.Emitter 3.Collector
DIM
Inches Min. Max.
Millimeters Min. Max.
DIM
Inches Min. Max.
*: Typical
Millimeters Min. Max.
A 0.0315 0.0433 0.80 1.10 e1
0.0256*
0.65*
A1 0.0000 0.0039 0.00 0.10 He 0.0846 0.0965 2..