N-CHANNEL MOSFET
KIA 90A,30V N-CHANNEL MOSFET
SEMICONDUCTORS S
100N03
1.Description
This Power MOSFET is produced using KIA`s advanced ...
Description
KIA 90A,30V N-CHANNEL MOSFET
SEMICONDUCTORS S
100N03
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
2. Features
n RDS(on)=3.1mΩ@ VGS=10V n Improved dv/dt capability n Fast switching n Green device available
3.Symbol
Pin Function 1 Gate 2 Drain 3 Source
1 of 5
Rev 1.0 OCT 2014
KIA 90A,30V N-CHANNEL MOSFET
SEMICONDUCTORS S
4. Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current Pulse drain current (note 1)
TC=25ºC TC=100ºC TC=25ºC
Avalanche current (note 2)
Avalanche energy, (note 2)
TC=25 ºC Maximum power dissipation
Derate above 25 ºC
Junction & storage temperature range
Symbol VDSS VGSS
ID
IDP IAS EAS
PD
TJ,TSTG
100N03
(TA=25°C,unless otherwise noted)
Rating
Units
30 V
+20 V
90 A
57 A
360 A
50 A
125 mJ
88 W
0.59 W/℃
-55-175
℃
5. Thermal characteristics
Parameter Thermal resistance, Junction-ambient Thermal resistance, Junction-case
Symbol RθJA RθJC
Rating 62 1.7
Unit
ºC/W ºC/W
2 of 5
Rev 1.0 OCT 2014
KIA 90A,30V N-CHANNEL MOSFET
100N03
SEMICONDUCTORS
6S . Electrical characteristics
Parameter Drain-source...
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