MTB020N10RH8

CYStech Electronics Corp. Spec. No. : C053H8 Issued Date : 2019.08.29 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020N10RH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.1mΩ(typ) Symbol MTB020N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB020N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB020N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053H8 Issued Date : 2019.08.29 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 5) Continuous Drain Current @TC=100C, VGS=10V (Note 5) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current @L=0.1mH (Note 3) Single Pulse Avalanche...