Power MOSFET
IRFP4868PbF
VDSS
RDS(on) typ. max.
ID
300V
25.5m 32m 70A
Applications High Efficiency Synchronous Rectification...
Description
IRFP4868PbF
VDSS
RDS(on) typ. max.
ID
300V
25.5m 32m 70A
Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
Benefits Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free
Base Part Number
IRFP4868PbF
Package Type
TO-247AC
G Gate
D
D Drain
S D G TO-247AC
S Source
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP4868PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Linear Derating Factor
VGS TJ TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC RCS RJA
Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Max. 70 49 280 517 3.4 ± 20
-55 to + 175
300
10lbfin (1.1Nm)
1093
See Fig. 14, 15, 22a, 22b
Typ. ––– 0.24 –––
Max. 0.29
––– 40
Units
A
W W/°C
V
°C
mJ A mJ
Units
°C/W
1 2017-06-21
IRFP48...
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