Power MOSFET. MTB20N04J3 Datasheet

MTB20N04J3 MOSFET. Datasheet pdf. Equivalent


CYStech MTB20N04J3
CYStech Electronics Corp.
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB20N04J3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
Features
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
40V
23A
16.3A
17.5mΩ
20.8mΩ
Equivalent Circuit
MTB20N04J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTB20N04J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20N04J3
CYStek Product Specification


MTB20N04J3 Datasheet
Recommendation MTB20N04J3 Datasheet
Part MTB20N04J3
Description N-Channel Enhancement Mode Power MOSFET
Feature MTB20N04J3; CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9.
Manufacture CYStech
Datasheet
Download MTB20N04J3 Datasheet




CYStech MTB20N04J3
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1mH, ID=18A, RG=25Ω
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 2/9
Limits
40
±20
23
16.3
92
18
162
30
15
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
5
62.5
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
10
μA
VDS =40V, VGS =0V
VDS =32V, VGS =0V, TJ=125°C
17.5
20.8
23
30
mΩ
VGS =10V, ID=10A
VGS =4.5V, ID=8A
14 - S VDS =5V, ID=10A
19.4 -
2.7 - nC VDS=20V, ID=10A, VGS=10V
4-
8-
16.8
42.6
-
-
ns VDS=20V, ID=1A, VGS=10V, RG=6Ω
7.8 -
876 -
93 - pF VGS=0V, VDS=10V, f=1MHz
78 -
3.6 - Ω f=1MHz
MTB20N04J3
CYStek Product Specification



CYStech MTB20N04J3
CYStech Electronics Corp.
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 3/9
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
23
92
A
VSD *1
- 0.74 1 V
trr - 10.1 - ns
Qrr - 6.5 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=1.3A, VGS=0V
IF=5A, dIF/dt=100A/μs
Recommended soldering footprint
MTB20N04J3
CYStek Product Specification







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