Power MOSFET. MTN2N65CFP Datasheet

MTN2N65CFP MOSFET. Datasheet pdf. Equivalent


CYStech MTN2N65CFP
CYStech Electronics Corp.
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN2N65CFP
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=1A
650V
2A
1.3A
4.5Ω(typ)
Description
The MTN2N65CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Applications
Adapter
Switching Mode Power Supply
Ordering Information
Device
MTN2N65CFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN2N65CFP
CYStek Product Specification


MTN2N65CFP Datasheet
Recommendation MTN2N65CFP Datasheet
Part MTN2N65CFP
Description N-Channel Enhancement Mode Power MOSFET
Feature MTN2N65CFP; CYStech Electronics Corp. Spec. No. : C082FP Issued Date : 2016.02.25 Revised Date : Page No. : 1/ .
Manufacture CYStech
Datasheet
Download MTN2N65CFP Datasheet




CYStech MTN2N65CFP
CYStech Electronics Corp.
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 2/ 9
Symbol
Outline
MTN2N65CFP
TO-220FP
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy @L=2mH, VGS=10V, VDD= 50V (Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol Limits
VDS
VGS
ID
IDM
IAS
EAS
EAR
650
±30
2*
1.3*
8*
2
4
2
TL 300
PD 23
0.18
Tj, Tstg -55~+150
Unit
V
A
mJ
°C
W
W/°C
°C
Note : 1.Pulse width limited by maximum junction temperature.
2. 100% testsed by conditions of IAS=1A, VDD=50V, L=2mH, VGS=10V, starting TJ=+25.
MTN2N65CFP
CYStek Product Specification



CYStech MTN2N65CFP
CYStech Electronics Corp.
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 3/ 9
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
5.5
62.5
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
650
-
2.0
-
-
-
-
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
- - V VGS=0V, ID=250μA, Tj=25
0.7 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
2.3 -
S VDS =15V, ID=1A
-
±100
nA VGS=±30V
-
-
1
10
μA
VDS =650V, VGS =0V
VDS =520V, VGS =0V, TC=125°C
4.5 5.8 Ω VGS =10V, ID=1A
7.8 11.7
2.3 -
2.4 -
5.4 10.8
3.2 6.4
8.6 17.2
5.6 11.2
268 402
32 48
11 16
3.7 -
nC ID=2A, VDD=520V, VGS=10V
ns
VDD=325V, ID=1.8A, VGS=10V,
RG=25Ω
pF VGS=0V, VDS=25V, f=1MHz
Ω f=1MHz
-2
-8
0.8 1.5
286 -
760 -
A
V IS=1A, VGS=0V
ns
nC
VGS=0V, IF=1.8A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTN2N65CFP
CYStek Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)