Zener Diode. BZX584B11V Datasheet

BZX584B11V Diode. Datasheet pdf. Equivalent


First Silicon BZX584B11V
SEMICONDUCTOR
TECHNICAL DATA
BZX584B2V4 ~ BZX584B36V
Zener Diode
Features
High reliability
Very sharp reverse characteristic
Low reverse current level
Zener Voltage 2.4V~36V
Mechanical Data
Package: SOD-523
Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: Cathode line denotes the cathode end
1
2
SOD-523
1
CATHODE
2
ANODE
Maximum Ratings (Ta=25Unless otherwise specified
PARAMETER
SYMBOL UNIT
Power Dissipation at Ta=25
PD mW
Storage Temperature Range
Maximum Junction Temperature
Tstg °C
TJ °C
Maximum Regulator Current
IZM mA
Forward Voltage(@10mA)
VF V
Thermal Resistance Junction to Ambient Air* RθJA °C /W
VALUE
200
-55~+150
-55~+150
PD / Vz
1.0
625
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
BZX584B2V4 ~
BZX584B36V
F2 Approximate 0.002
MINIMUM
PACKAGE(pcs)
8000
INNER BOX OUTER CARTON DELIVERY
QUANTITY(pcs) QUANTITY(pcs) MODE
80000
320000
7” reel
2019. 09. 27
Revision No : 0
1/4


BZX584B11V Datasheet
Recommendation BZX584B11V Datasheet
Part BZX584B11V
Description Zener Diode
Feature BZX584B11V; SEMICONDUCTOR TECHNICAL DATA BZX584B2V4 ~ BZX584B36V Zener Diode Features ● High reliability ● V.
Manufacture First Silicon
Datasheet
Download BZX584B11V Datasheet




First Silicon BZX584B11V
BZX584B2V4 ~ BZX584B36V
Electrical CharacteristicsTa=25Unless otherwise specified
TypeNumber Device Marking
BZX584B2V4
BZX584B2V7
BZX584B3V0
BZX584B3V3
BZX584B3V6
BZX584B3V9
BZX584B4V3
BZX584B4V7
BZX584B5V1
BZX584B5V6
BZX584B6V2
BZX584B6V8
BZX584B7V5
BZX584B8V2
BZX584B9V1
BZX584B10V
BZX584B11V
BZX584B12V
BZX584B13V
BZX584B15V
BZX584B16V
BZX584B18V
BZX584B20V
BZX584B22V
BZX584B24V
BZX584B27V
BZX584B30V
BZX584B33V
BZX584B36V
05
15
25
35
45
+5
65
75
85
95
A5
B5
C5
D5
E5
F5
G5
H5
J5
K5
L5
M5
N5
P5
R5
S5
T5
U5
V5
min.
2.34
2.56
2.92
3.21
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.68
17.64
19.6
21.56
23.52
26.46
29.4
32.34
35.28
Vz at IZT(V)
typ.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
max.
2.46
2.84
3.08
3.39
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.32
18.36
20.4
22.44
24.48
27.54
30.6
33.66
36.72
Zzt()
IZT(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
max.
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
Zzk()
Izk(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
max.
600
600
600
600
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
IR(μA)@VR
uA
45
20
10
15
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
VR(V)
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23
25.2
2019. 09. 27
Revision No : 0
2/4



First Silicon BZX584B11V
BZX584B2V4 ~ BZX584B36V
Characteristics (Typical)
2019. 09. 27
Revision No : 0
3/4







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