SVF10N80F

SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,800V,RDS(on)(typ.)=0.92@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF10N80F SVF10N80K Package TO-220F-3L TO-262-3L Marking SVF10N80F SVF10N80K Hazardous Substance Control Pb free Halogen free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.4 Page 1 of 8 SVF10N80F/K_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings SVF10N80F SVF10N80K 800 ±30 10.0 6.32 40 62 230 0.50 1.84 938 -55～+150 -55～+150 THERMAL CHARACTERISTICS Characteristics Symbol Ther...