SILICON TRANSISTOR. SJT688APPN Datasheet

SJT688APPN TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SJT688APPN
SJT688APPN_Datasheet
SJT688A PNP SILICON TRANSISTOR
DESCRIPTIONS
SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor
technology, The advanced technology of multilayer epitaxy, ultra-low density
of crystal defects, polyimide passivation, and thin chip of less than 200
microns makes low thermal resistance, large power dissipation and good
reliability of SJT688APPN. Optimized die structure design and package
design promote secondary breakdown resistance of the device.
This product is mainly used for output power level of audio power amplifier in
car stereo audio, has the characteristics of wide linear range and low
distortion.
The package available is TO-3P.
Complementary NPN transistor: SJT718ANPN.
FEATURES
High breakdown voltage margin
Very low leakage current
High output power: 80W
High secondary breakdown tolerance and reliability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SJT688APPN
Package
TO-3P
Marking
688A
Material
Pb free
Packing
Tube
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted)
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
Base Current
Operating Junction Temperature Range
Symbol
BVCEO
BVEBO
BVCBO
IC
IB
TJ
-120
-5
-120
Rating
-10
-1
-55~+150
IC=5mA, IB=0
IE=1mA, IC=0
IC=1mA, IE=0
Unit
V
V
V
A
A
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 5


SJT688APPN Datasheet
Recommendation SJT688APPN Datasheet
Part SJT688APPN
Description PNP SILICON TRANSISTOR
Feature SJT688APPN; SJT688APPN_Datasheet SJT688A PNP SILICON TRANSISTOR DESCRIPTIONS SJT688APPN is PNP silicon transisto.
Manufacture Silan Microelectronics
Datasheet
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Silan Microelectronics SJT688APPN
SJT688APPN_Datasheet
Characteristics
Storage Temperature Range
Collector power dissipation (Tc=25°C)
Symbol
Tstg
PC
Rating
-55~+150
80
Unit
°C
W
ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted)
Characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Base - Emitter Voltage
Collector-Base Leakage Current
Collector-Emitter Leakage Current
Emitter -Base Leakage Current
Transition Frequency
Collector Output Capacitance
Symbol
HFE
VCE(sat)
VBE
ICBO
ICEO
IEBO
FT
COb
Test Condition
VCE=-5V, IC=-1A
IC=-6A, IB=-0.6A
VCE=-5V, IC=-5A
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
VCE=-5V, IC=-1A
VCB =-10V, IE =0, f =1MHz
Min.
55
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
10
230
Max.
160
-2
-1.5
-10
100
-10
-
-
Unit
-
V
V
μA
μA
μA
MHZ
pF
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 2 of 5



Silan Microelectronics SJT688APPN
SJT688APPN_Datasheet
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 3 of 5





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