SILICON TRANSISTOR. SJT4793NF Datasheet

SJT4793NF TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SJT4793NF
SJT4793NF_Datasheet
SJT4793NF NPN SILICON TRANSISTOR
DESCRIPTIONS
SJT4793NF is NPN silicon transistor fabricated with Silan planar transistor
technology, The advanced technology of multilayer epitaxy, ultra-low density
of crystal defects, polyimide passivation, and thin chip of less than 200
microns makes low thermal resistance, large power dissipation and good
reliability of SJT4793NF. Optimized die structure design and package design
promote secondary breakdown resistance of the device.
This product is mainly used for output power level or driver stage of audio
power amplifier in household appliances, AV equipment, professional audio
equipment and car stereo audio, has the characteristics of wide linear range
and low distortion.
The package available is TO-220F-3L.
Complementary PNP transistor: SJT1837PF.
FEATURES
High breakdown voltage margin
Very low leakage current
High output power: 20W
High secondary breakdown tolerance and reliability
NOMENCLATURE
Name of bipolar transistor series
SJT XXX X F
product name
Package type: e.g. F denotes TO-220F-3L
Transistor type: e.g. N denotes NPN, P denotes PNP
ORDERING INFORMATION
Part No.
SJT4793NF
Package
TO-220F-3L
Marking
SJT4793NF
Material
Pb free
Packing
Tube
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted)
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
Base Current
Operating Junction Temperature Range
Storage Temperature Range
Collector power dissipation (TC=25°C)
Symbol
BVCEO
BVEBO
BVCBO
IC
IB
TJ
Tstg
PC
250
5
250
Rating
IC=1mAIB=0
IE=1mAIC=0
IC=100uAIE=0
1
0.1
150
-55~+150
20
Unit
V
V
V
A
A
°C
°C
W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 5


SJT4793NF Datasheet
Recommendation SJT4793NF Datasheet
Part SJT4793NF
Description NPN SILICON TRANSISTOR
Feature SJT4793NF; SJT4793NF_Datasheet SJT4793NF NPN SILICON TRANSISTOR DESCRIPTIONS SJT4793NF is NPN silicon transis.
Manufacture Silan Microelectronics
Datasheet
Download SJT4793NF Datasheet




Silan Microelectronics SJT4793NF
SJT4793NF_Datasheet
ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted)
Characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Base - Emitter Voltage
Collector-Base Leakage Current
Collector-Emitter Leakage Current
Emitter -Base Leakage Current
Transition Frequency
Collector Output Capacitance
Symbol
hFE
VCE(sat)
VBE
ICBO
ICEO
IEBO
FT
COB
Test Condition
VCE=5V, IC=100mA
Ic=500mA,Ib=50mA
VCE=5V, Ic=500mA
VCB=250V, IE=0
VCE=230V, IB=0
VEB=5V, IC=0
VCE=10V, IC=100mA
VCB =10V, IE =0, f=1MHz
Min.
100
--
--
--
--
--
--
--
Typ.
--
--
--
--
--
--
100
15
Max.
320
1
1
1
20
1
--
--
Unit
--
V
V
μA
μA
μA
MHZ
pF
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
IC - VCE
Common
Emitter
TC=25°C
250mA
200mA
150mA
100mA
50mA
30mA
20mA
10mA
6mA
IB=2mA
5 10 15 20 25 30
Collector-Emitter Voltage - VCE(V)
IC - VBE
1.0
-25°C
0.8 25°C
100°C
0.6
0.4
Common
0.2 Emitter
VCE=5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-Emitter Voltage - VBE(V)
VCE(sat) - IC
101
-25°C
25°C
100°C
100
103
-25°C
25°C
100°C
hFE -IC
10-1
102
10-2
10-2
Common
Emitter
IC/IB=10
10-1
100
Collector Current- IC(A)
101
1011 0-3
Common
Emitter
VCE=5V
10-2
10-1
100
Collector Current - IC(A)
101
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 2 of 5



Silan Microelectronics SJT4793NF
SJT4793NF_Datasheet
TYPICAL ELECTRICAL CHARACTERISTICS CURVE(continued)
VCE(sat) - IB
10
25
IC=5.0A
8
IC=10.0A
20
PC - TC
Infinite heat sink
6 15
4 10
25
0
0 0.5 1.0 1.5 2
Base current - IB(A)
0
0 25 50 75 100 125 150
Ambient temperature - TC(°C)
6.00E-11
CC - BVCBO
Safe Operating Area
100
5.00E-11
4.00E-11
3.00E-11
10-1
2.00E-11
1.00E-11
0.00E+00
0.00
20.00 40.00 60.00 80.00 100.00 120.00
Collector-base voltage - BVCBO(V)
10-2100
101 102
Collector-emitter voltage - VCE(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 3 of 5







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