SJT4793NF

SJT4793NF_Datasheet SJT4793NF NPN SILICON TRANSISTOR DESCRIPTIONS SJT4793NF is NPN silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good reliability of SJT4793NF. Optimized die structure design and package design promote secondary breakdown resistance of the device. This product is mainly used for output power level or driver stage of audio power amplifier in household appliances, AV equipment, professional audio equipment and car stereo audio, has the characteristics of wide linear range and low distortion. The package available is TO-220F-3L. Complementary PNP transistor: SJT1837PF. FEATURES  High breakdown voltage margin  Very low leakage current  High output power: 20W  High secondary breakdown tolerance and reliability NOMENCLATURE Name of bipolar transistor series SJT XXX X F product name Package type: e.g. F denotes TO-220F-3L Transistor type: e.g. N denotes NPN, P denotes PNP ORDERING INFORMATION Part No. SJT4793NF Package TO-220F-3L Marking SJT4793NF Material Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Current Base Current Operating Junction Temperature Range Storage T...