Silan Microelectronics
SVF10N60CF/T/FJD_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N60CF/T is an N-...
Silan Microelectronics
SVF10N60CF/T/FJD_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N60CF/T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
10A,600V,RDS(on)(typ.)=0.75@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
2
11
23
3 1.Gate 2.Drain 3.Source TO-220FJD-3L
1 23
TO-220F-3L
1 23
TO-220-3L
SVFXNEXXCX
Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A
N denotes N Channel
Package information.Example: F:TO-220F; T:TO-220
REV.
Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V.
Special Features indication, May be omitted. Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF10N60CF SVF10N60CT SVF10N60CFJD
Package
TO-220F-3L TO-220-3L TO-220FJD-3L
Marking
SVF10N60CF SVF10N60CT 10N60CFJD
Hazardous Substance Control
Halogen free Pb free
Halogen free
Packing
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