SVFP7N65CFJD

Silan Microelectronics SVFP7N65CFJD/D/MJ_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 650V, RDS(on)(typ.)=1.1@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 123 3 TO-251J-3L 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L 1 3 TO-252-2L S V F PX N X X C A X Silan VDMOS Code of F-Cell process PASSIVATION Nominal current,using 1 or 2 digits:Example:4 denotes 4A N denotes N Channel Package information. Example: MJ:TO-251J. REV. Nominal Voltage,using 2 digits Example: 60 denotes 600V ORDERING INFORMATION Part No. SVFP7N65CFJD SVFP7N65CDTR SVFP7N65CMJ Package TO-220FJD-3L TO-252-2L TO-251J-3L Marking P7N65CFJD P7N65CD P7N65CMJ Hazardous Substance Control Halogen free Halogen free Halogen free Packing Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 9 Silan Microelectronics SVFP7N65CFJD/D/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise not...