N-CHANNEL MOSFET. SVFP7N65CMJ Datasheet

SVFP7N65CMJ MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVFP7N65CMJ
Silan
Microelectronics
SVFP7N65CFJD/D/MJ_Datasheet
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
7A, 650V, RDS(on)(typ.)=1.1@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1 123
3 TO-251J-3L
1.Gate 2.Dratin 3.Source
123
TO-220FJD-3L
1
3
TO-252-2L
S V F PX N X X C A X
Silan VDMOS Code
of F-Cell process
PASSIVATION
Nominal current,using 1
or 2 digits:Example:4 denotes 4A
N denotes N Channel
Package information. Example:
MJ:TO-251J.
REV.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V
ORDERING INFORMATION
Part No.
SVFP7N65CFJD
SVFP7N65CDTR
SVFP7N65CMJ
Package
TO-220FJD-3L
TO-252-2L
TO-251J-3L
Marking
P7N65CFJD
P7N65CD
P7N65CMJ
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 9


SVFP7N65CMJ Datasheet
Recommendation SVFP7N65CMJ Datasheet
Part SVFP7N65CMJ
Description 650V N-CHANNEL MOSFET
Feature SVFP7N65CMJ; Silan Microelectronics SVFP7N65CFJD/D/MJ_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION S.
Manufacture Silan Microelectronics
Datasheet
Download SVFP7N65CMJ Datasheet




Silan Microelectronics SVFP7N65CMJ
Silan
Microelectronics
SVFP7N65CFJD/D/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC = 25C
TC = 100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse Diode dv/dt (Note 2)
MOSFET dv/dt Ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
SVFP7N65CFJD
SVFP7N65CD/CMJ
650
±30
7.0
4.4
28
46 89
0.37 0.71
435
4.5
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVFP7N65CFJD
SVFP7N65CD/CMJ
2.7 1.4
62.5 62.0
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 9



Silan Microelectronics SVFP7N65CMJ
Silan
Microelectronics
SVFP7N65CFJD/D/MJ_Datasheet
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Symbol
Test conditions
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=3.5A
f=1.0MHz
VDS=25V,VGS=0V, f=1.0MHz
VDD=325V, RG=25,
ID=7.0A
(Note 2,3)
VDS=520V, ID=7.0A,
VGS=10V
(Note 2,3)
Min.
650
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
IS
ISM
VSD
Trr
Qrr
Test conditions
Integral Reverse P-N Junction
Diode in the MOSFET
IS=7.0A,VGS=0V
IS=7.0A,VGS=0V,
dIF/dt=100A/µS
(Note 2)
Notes:
1.
2.
3.
4.
5.
L=30mH, IAS=5.0A, VDD=100V, RG=25, starting temperature TJ=25C;
VDS=0~400V, ISD<=7A, TJ=25C;
VDS=0~480V;
Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
1.1
2.8
789
98
9.0
15
32
51
33
21
4.5
10
Typ.
--
--
--
499
3.0
Max.
--
1.0
±100
4.0
1.4
--
--
--
--
--
--
--
--
--
--
--
Max.
7.0
28
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 3 of 9







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