N-CHANNEL MOSFET. SVF4N150F Datasheet

SVF4N150F MOSFET. Datasheet pdf. Equivalent


SILAN MICROELECTRONICS SVF4N150F
Silan
Microelectronics
SVF4N150PF(P7)(F)_Datasheet
4A, 1500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N150PF(P7)(F) is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM high-voltage planar VDMOS technology. The
improved process and cell structure have been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in power supplies.
FEATURES
4A, 1500V, RDS(on)(typ)=5.0@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
2
1
3 12 3
TO-220F-3L
1. Gate 2. Drain 3. Source
123
TO-3PF
12 3
TO-247-3L
ORDERING INFORMATION
Part No.
SVF4N150PF
SVF4N150P7
SVF4N150F
Package
TO-3PF
TO-247-3L
TO-220F-3L
Marking
4N150
4N150P7
SVF4N150F
Hazardous
Substance Control
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 9


SVF4N150F Datasheet
Recommendation SVF4N150F Datasheet
Part SVF4N150F
Description 1500V N-CHANNEL MOSFET
Feature SVF4N150F; Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet 4A, 1500V N-CHANNEL MOSFET GENERAL DESCRIPTION.
Manufacture SILAN MICROELECTRONICS
Datasheet
Download SVF4N150F Datasheet




SILAN MICROELECTRONICS SVF4N150F
Silan
Microelectronics
SVF4N150PF(P7)(F)_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C
TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF4N150PF
73
0.49
Ratings
SVF4N150P7
1500
±30
4.0
2.5
16
160
1.28
485
-55+150
-55+150
SVF4N150F
39
0.3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVF4N150PF
1.7
50
Ratings
SVF4N150P7
0.78
50
SVF4N150F
3.17
62.5
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=1500V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=1.3A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=750VID=4A
RG=25
(Note2,3)
VDS=1200V, ID=4A, VGS=10V
(Note 2,3)
Min.
1500
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
5.0
1034
91
12
25
51
86
46
40
8.7
23
Max.
--
10.0
±500
5.0
6.5
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 9



SILAN MICROELECTRONICS SVF4N150F
Silan
Microelectronics
SVF4N150PF(P7)(F)_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=4.0A,VGS=0V
Reverse Recovery Time
Trr IS=4.0A,VGS=0V,dIF/dt=100A/µs
Reverse Recovery Charge
Notes:
Qrr
(Note 2)
1. L=79mH, IAS=3.4A, VDD=100V, RG=25, starting TBJB=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature..
TYPICAL CHARACTERISTICS
Min.
--
--
--
--
--
Typ.
--
--
--
373
2.4
Max.
4.0
16
1.4
--
--
Unit
A
V
ns
µC
Figure 1. On-Region Characteristics
100
Variable
VGS=5V
VGS=5.5V
VGS=6V
VGS=10V
10 VGS=15V
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
0.1
0.1
Notes:
1.250µS pulse test
2.TC=25°C
1 10 100
Drain-Source Voltage VDS(V)
Figure 3. On-Resistance Variation vs. Drain Current
6.5
VGS=10V
6.0 VGS=20V
5.5
5.0
4.5
Note: TJ=25°C
4.0
12345
Drain Current ID(A)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
2 3 4 5 6 7 8 9 10 11 12
Gate-Source Voltage VGS(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
-55°C
25°C
150°C
10
1
0.1
0
Notes:
1.250µS pulse test
2.VGS=0V
123
Source-Drain Voltage VSD(V)
Rev.:1.3
Page 3 of 9







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