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Silan Microelectronics
SVF4N150PF(P7)(F)_Datasheet
4A, 1500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies.
FEATURES
4A, 1500V, RDS(on)(typ)=5.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
1 3 12 3 TO-220F-3L
1. Gate 2. Drain 3. Source
123 TO-3PF
12 3 TO-247-3L
ORDERING INFORMATION
Part No.
SVF4N150PF SVF4N150P7 SVF4N150F
Package
TO-3PF TO-247-3L TO-220F-3L
Marking
4N150 4N150P7 SVF4N150F
Hazardous Substance Control
Pb free Pb free Pb free
Packing
Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3 Page 1 of 9
Silan Microelectronics
SVF4N150PF(P7)(F)_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF4N150PF
73 0.49
Ratings SVF4N150P7
1500 ±30 4.0 2.5 16 160 1.28 485 -55~+150 -55~+150
SVF4N150F
39 0.3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
RθJC RθJA
SVF4N150PF 1.7 50
Ratings SVF4N150P7
0.78 50
SVF4N150F 3.17 62.5
Unit
V V A A W W/C mJ C C
Unit C/W C/W
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS
IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=1500V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=1.3A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=750V,ID=4A, RG=25
(Note2,3) VDS=1200V, ID=4A, VGS=10V
(Note 2,3)
Min. 1500
--3.0
--
-----------
Typ. -----
5.0
1034 91 12 25 51 86 46 40 8.7 23
Max. --
10.0 ±500 5.0
6.5
-----------
Unit V µA nA V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3 Page 2 of 9
Silan Microelectronics
SVF4N150PF(P7)(F)_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=4.0A,VGS=0V
Reverse Recovery Time
Trr IS=4.0A,VGS=0V,dIF/dt=100A/µs
Reverse Recovery Charge Notes:
Qrr
(Note 2)
1. L=79mH, IAS=3.4A, VDD=100V, RG=25, starting TBJB=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature..
TYPICAL CHARACTERISTICS
Min. ------
Typ. ----
373 2.4
Max. 4.0 16 1.4 ---
Unit
A
V ns µC
Figure 1. On-Region Characteristics
100 Variable VGS=5V VGS=5.5V VGS=6V VGS=10V
10 VGS=15V
Figure 2. Transfer Characteristics 100
-55°C 25°C 150°C
10
Drain Current – ID(A)
Drain Current – ID(A)
Drain-Source On-Resistance – RDS(ON)(Ω)
1
0.1 0.1
Notes: 1.250µS pulse test 2.TC=25°C
1 10 100
Drain-Source Voltage – VDS(V)
Figure 3. On-Resistance Variation vs. Drain Current 6.5
VGS=10V 6.0 VGS=20V
5.5
5.0
4.5 Note: TJ=25°C
4.0 12345 Drain Current – ID(A)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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Reverse Drain Current – IDR(A)
1
Notes: 1.250µS pulse test 2.VDS=50V 0.1 2 3 4 5 6 7 8 9 10 11 12
Gate-Source Voltage – VGS(V)
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100
-55°C 25°C 150°C 10
1
0.1 0
Notes: 1.250µS pulse test 2.VGS=0V
123
Source-Drain Voltage – VSD(V)
Rev.:1.3 Page 3 of 9
Silan Microelectronics
SVF4N150PF(P7)(F)_Datasheet
TYPICAL CHARACTERISTICS(continued)
2500 2000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Capacitance (pF)
1500 1000
500
Ciss Coss Crss
Notes: 1. VGS=0V 2. f=1MHz
0 0.1 1 10 100
Drain-Source Voltage – VDS(V)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.4
Gate-Source Voltage – VGS(V)
Figure 6. Gate Charge Characteristics 12
VDS=1200V 10 VDS=750V
VDS=300V 8
6
4
2 Note: ID=4A
0 0 10 20 30 40 50
Total Gate Charge – Qg(nC)
Figure 8. On-Resistance Variation vs.Temperature
1.4
Drain-Source On-.