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SVF4N150F Dataheets PDF



Part Number SVF4N150F
Manufacturers SILAN MICROELECTRONICS
Logo SILAN MICROELECTRONICS
Description 1500V N-CHANNEL MOSFET
Datasheet SVF4N150F DatasheetSVF4N150F Datasheet (PDF)

Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet 4A, 1500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devic.

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Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet 4A, 1500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. FEATURES  4A, 1500V, RDS(on)(typ)=5.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF4N150PF SVF4N150P7 SVF4N150F Package TO-3PF TO-247-3L TO-220F-3L Marking 4N150 4N150P7 SVF4N150F Hazardous Substance Control Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.3 Page 1 of 9 Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25C TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ Tstg SVF4N150PF 73 0.49 Ratings SVF4N150P7 1500 ±30 4.0 2.5 16 160 1.28 485 -55~+150 -55~+150 SVF4N150F 39 0.3 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF4N150PF 1.7 50 Ratings SVF4N150P7 0.78 50 SVF4N150F 3.17 62.5 Unit V V A A W W/C mJ C C Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=1500V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=1.3A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=750V,ID=4A, RG=25 (Note2,3) VDS=1200V, ID=4A, VGS=10V (Note 2,3) Min. 1500 --3.0 -- ----------- Typ. ----- 5.0 1034 91 12 25 51 86 46 40 8.7 23 Max. -- 10.0 ±500 5.0 6.5 ----------- Unit V µA nA V  pF ns nC HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.3 Page 2 of 9 Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current IS Integral Reverse P-N Junction Pulsed Source Current ISM Diode in the MOSFET Diode Forward Voltage VSD IS=4.0A,VGS=0V Reverse Recovery Time Trr IS=4.0A,VGS=0V,dIF/dt=100A/µs Reverse Recovery Charge Notes: Qrr (Note 2) 1. L=79mH, IAS=3.4A, VDD=100V, RG=25, starting TBJB=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.. TYPICAL CHARACTERISTICS Min. ------ Typ. ---- 373 2.4 Max. 4.0 16 1.4 --- Unit A V ns µC Figure 1. On-Region Characteristics 100 Variable VGS=5V VGS=5.5V VGS=6V VGS=10V 10 VGS=15V Figure 2. Transfer Characteristics 100 -55°C 25°C 150°C 10 Drain Current – ID(A) Drain Current – ID(A) Drain-Source On-Resistance – RDS(ON)(Ω) 1 0.1 0.1 Notes: 1.250µS pulse test 2.TC=25°C 1 10 100 Drain-Source Voltage – VDS(V) Figure 3. On-Resistance Variation vs. Drain Current 6.5 VGS=10V 6.0 VGS=20V 5.5 5.0 4.5 Note: TJ=25°C 4.0 12345 Drain Current – ID(A) HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Reverse Drain Current – IDR(A) 1 Notes: 1.250µS pulse test 2.VDS=50V 0.1 2 3 4 5 6 7 8 9 10 11 12 Gate-Source Voltage – VGS(V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 -55°C 25°C 150°C 10 1 0.1 0 Notes: 1.250µS pulse test 2.VGS=0V 123 Source-Drain Voltage – VSD(V) Rev.:1.3 Page 3 of 9 Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet TYPICAL CHARACTERISTICS(continued) 2500 2000 Figure 5. Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance (pF) 1500 1000 500 Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz 0 0.1 1 10 100 Drain-Source Voltage – VDS(V) Figure 7. Breakdown Voltage Variation vs. Temperature 1.4 Gate-Source Voltage – VGS(V) Figure 6. Gate Charge Characteristics 12 VDS=1200V 10 VDS=750V VDS=300V 8 6 4 2 Note: ID=4A 0 0 10 20 30 40 50 Total Gate Charge – Qg(nC) Figure 8. On-Resistance Variation vs.Temperature 1.4 Drain-Source On-.


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