SVSP14N60F(FJD)(T)D2_Datasheet
14A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVSP14N60F(FJD)(T)D2 is an N-channel enhan...
SVSP14N60F(FJD)(T)D2_Datasheet
14A, 600V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
14A,600V, RDS(on)(typ.)=0.25@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
ORDERING INFORMATION
Part No.
SVSP14N60TD2 SVSP14N60FJDD2 SVSP14N60FD2
Package
TO-220-3L TO-220FJD-3L
TO-220F-3L
Marking
P14N60TD2 P14N60FJD P14N60FD2
Hazardous Substance Control
Halogen free Halogen free Halogen free
Packing
Tube Tube Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation (TC=25C) - Derate above 25C
Single Pulsed Avalanche Energy (Note1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness(Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS dv/dt dv/dt
TJ Tstg
Ratings
SVSP14N60TD2
SVSP14N60F/FJDD2
600
±30
14
8.8
56
120 38
0.96 0.3
580
15
50
-55~+150
-55~+150
Unit
V V
A
A W W/C ...