POWER TRANSISTOR. SVS7N60FD2 Datasheet

SVS7N60FD2 TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SVS7N60FD2
SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS7N60FJD2
SVS7N60DD2TR
SVS7N60FD2
Package
TO-220FJ-3L
TO-252-2L
TO-220F-3L
Marking
7N60FJD2
SVS7N60DD2
SVS7N60FD2
Hazardous
substance control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape&Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 9


SVS7N60FD2 Datasheet
Recommendation SVS7N60FD2 Datasheet
Part SVS7N60FD2
Description 600V DP MOS POWER TRANSISTOR
Feature SVS7N60FD2; SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N.
Manufacture Silan Microelectronics
Datasheet
Download SVS7N60FD2 Datasheet




Silan Microelectronics SVS7N60FD2
SVS7N60F(FJ)(D)D2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
SVS7N60F/FJD2
SVS7N60DD2
600
±30
7.0
4.4
28
30 60
0.24 0.48
255
15
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVS7N60FJD2
SVS7N60DD2
4.17
2.08
62.5
62.0
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 9



Silan Microelectronics SVS7N60FD2
SVS7N60F(FJ)(D)D2_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS=VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=100V, VGS=0V,
f=1.0MHZ
VDD=300V, ID=7.0A,
VGS=10V, RG=24
(Note 4,5)
VDS=480V, ID=7.0A,
VGS=10V
(Note 4,5)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=7.0A,VGS=0V
Reverse Recovery Time
Trr IS=7.0A,VGS=0V,
Reverse Recovery Charge
Notes:
Qrr dIF/dt=100A/µs
1. L=79mH,IAS=2.4A,VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V,ISD<=7.0A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.48
427
26
1.9
11
29
43
25
16
3.8
8.3
Typ.
--
--
--
344
2.6
Max.
--
1.0
±100
4.0
0.58
--
--
--
--
--
--
--
--
--
--
Max.
7.0
28
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 3 of 9







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