Silan
Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet
7A, 700V DP MOS POWER TRANSISTOR
DESCRIPTION
2
SVSP7N70F(D)(...
Silan
Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet
7A, 700V DP MOS POWER
TRANSISTOR
DESCRIPTION
2
SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
7A, 700V, RDS(on)(typ.)=0.52@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
NOMENCLATURE
1 3
1.Gate 2.Drain 3.Source
1 3
TO-252-2L
1 2 3 TO-220FJD-3L
1 3 TO-263-2L
1 23
TO-220F-3L
SVSPXNXXXDX
Silan DPMOS Code of D-Well process Process Version, P denotes PASSIVATION
Nominal current,using 1 or 2 digits: Example:4 denotes 4A
N denotes N Channel
D2:Second generation process
Package information. Example: FJD:TO-220FJD .
Nominal Voltage,using 2 digits Example: 65 denotes 650V
ORDERING INFORMATION
Part No.
SVSP7N70FD2 SVSP7N70DD2TR SVSP7N70SD2 SVSP7N70SD2TR SVSP7N70FJDD2
Package
TO-220F-3L TO-252-2L TO-263-2L TO-263-2L TO-220FJD-3L
Marking
P7N70FD2 P7N70DD2 P7N70SD2 P7N70SD2 P7N70FJDD2
Hazardous Substance Control
Halogen free Halogen free Halogen free Halogen free Halogen free
Packing
Tube Tape&reel
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