POWER TRANSISTOR. SVSP7N70SD2 Datasheet

SVSP7N70SD2 TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SVSP7N70SD2
Silan
Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet
7A, 700V DP MOS POWER TRANSISTOR
DESCRIPTION
2
SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode
high voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
7A, 700V, RDS(on)(typ.)=0.52@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
NOMENCLATURE
1
3
1.Gate 2.Drain 3.Source
1
3
TO-252-2L
1 2 3 TO-220FJD-3L
1
3
TO-263-2L
1 23
TO-220F-3L
SVSPXNXXXDX
Silan DPMOS Code
of D-Well process
Process Version, P
denotes PASSIVATION
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A
N denotes N Channel
D2:Second generation process
Package information. Example:
FJD:TO-220FJD
.
Nominal Voltage,using 2 digits
Example: 65 denotes 650V
ORDERING INFORMATION
Part No.
SVSP7N70FD2
SVSP7N70DD2TR
SVSP7N70SD2
SVSP7N70SD2TR
SVSP7N70FJDD2
Package
TO-220F-3L
TO-252-2L
TO-263-2L
TO-263-2L
TO-220FJD-3L
Marking
P7N70FD2
P7N70DD2
P7N70SD2
P7N70SD2
P7N70FJDD2
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape&reel
Tube
Tape&reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 9


SVSP7N70SD2 Datasheet
Recommendation SVSP7N70SD2 Datasheet
Part SVSP7N70SD2
Description 700V DP MOS POWER TRANSISTOR
Feature SVSP7N70SD2; Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTI.
Manufacture Silan Microelectronics
Datasheet
Download SVSP7N70SD2 Datasheet




Silan Microelectronics SVSP7N70SD2
Silan
Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Body diode (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
SVSP7N70
FD2/FJDD2
34
0.3
Ratings
SVSP7N70
DD2
700
±30
7.0
4.4
28
74
0.6
400
15
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVSP7N70
FD2/FJDD2
3.7
62.5
Ratings
SVSP7N70
DD2
1.7
62.0
SVSP7N70
SD2
89
0.7
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
SVSP7N70
SD2
1.4
62.5
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 9



Silan Microelectronics SVSP7N70SD2
Silan
Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=700V, VGS=0V
VGS=±30V, VDS=0V
VGS=VDS, ID=250µA
VGS=10V, ID=3.5A
f=1.0MHz
VDS=100VVGS=0V
f=1.0MHz
VDD=350V, ID=7.0A,
VGS=10V, RG=24
(Note 4,5)
VDS=560V, ID=7.0A,
VGS=10V
(Note 4,5)
Min.
700
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD IS=7.0A,VGS=0V
Trr IS=7.0A,VGS=0V,
Qrr dIF/dt=100A/µs
(Note 4)
1. L=79mH,IAS=3.0A,VDD=100V, RG=25, starting TJ=25C;
2. VDS=0~400V, ISD<=7.0A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.52
4.9
494
27
3.5
10
28
53
26
18
3.9
9.3
Typ.
--
--
--
317
2.8
Max.
--
1.0
±100
4.0
0.6
--
--
--
--
--
--
--
--
--
--
Max.
7.0
28
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 3 of 9





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