SVSP7N70SD2

Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  7A, 700V, RDS(on)(typ.)=0.52@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 2 3 TO-220FJD-3L 1 3 TO-263-2L 1 23 TO-220F-3L SVSPXNXXXDX Silan DPMOS Code of D-Well process Process Version, P denotes PASSIVATION Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel D2:Second generation process Package information. Example: FJD:TO-220FJD . Nominal Voltage,using 2 digits Example: 65 denotes 650V ORDERING INFORMATION Part No. SVSP7N70FD2 SVSP7N70DD2TR SVSP7N70SD2 SVSP7N70SD2TR SVSP7N70FJDD2 Package TO-220F-3L TO-252-2L TO-263-2L TO-263-2L TO-220FJD-3L Marking P7N70FD2 P7N70DD2 P7N70SD2 P7N70SD2 P7N70FJDD2 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Packing Tube Tape&reel Tube Tape&reel Tube HANGZHOU SILAN MICROELECTRONICS...