SVF6N60FQ

SVF6N60F/D/FQ_Datasheet 6A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A,600V,RDS(on(typ.)=1.35@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF6N60F SVF6N60DTR SVF6N60FQ Package TO-220F-3L TO-252-2L TO-220FQ-3L Marking SVF6N60F SVF6N60D SVF6N60FQ Hazardous substance control Pb free Halogen free Pb free Packing Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.5 Page 1 of 10 SVF6N60F/D/FQ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25C Drain Current TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings SVF6N60F/FQ SVF6N60D 600 ±30 6 3.8 24 42 125 0.34 1.00 343 -55～+150 -55～+150 THERMAL CHA...