SVF7N60S

SVF7N60F/S/D_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60F/S/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 600V, RDS(on)（typ）=0.96@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVF7N60F SVF7N60S SVF7N60STR SVF7N60DTR Package TO-220F-3L TO-263-2L TO-263-2L TO-252-2L Marking SVF7N60F SVF7N60S SVF7N60S SVF7N60D 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 123 TO-220F-3L 1 3 TO-263-2L Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Packing Tube Tube Tape & Reel Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.2 Page 1 of 10 SVF7N60F/S/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID ID...