SVF7N60CF/S/K/MJ/D/T_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60CF/S/K/MJ/D/T is an N-channel enhanc...
SVF7N60CF/S/K/MJ/D/T_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
7A, 600V, RDS(on)(typ)=0.96@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF7N60CF SVF7N60CS SVF7N60CSTR SVF7N60CK SVF7N60CMJ SVF7N60CD SVF7N60CDTR SVF7N60CT
Package TO-220F-3L TO-263-2L TO-263-2L TO-262-3L TO-251J-3L TO-252-2L TO-252-2L TO-220-3L
Marking SVF7N60CF SVF7N60CS SVF7N60CS SVF7N60CK SVF7N60C SVF7N60C SVF7N60C SVF7N60CT
Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Pb free
Packing Tube Tube
Tape & Reel Tube Tube Tube
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7 Page 1 of 10
SVF7N60CF/S/K/MJ/D/T_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25C TC=100C
Power Dissipa...