SVF730MJ

SVF730F/T/M/MJ_Datasheet 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A, 400V, RDS(on)（typ）=0.66@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVF730T SVF730F SVF730M SVF730MJ Package TO-220-3L TO-220F-3L TO-251D-3L TO-251J-3L Marking SVF730T SVF730F SVF730M SVF730MJ Hazardous Substance Control Pb free Pb free Halogen free Halogen free Packing Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.8 Page 1 of 10 SVF730F/T/M/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25C TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVF730M 77 0.62 Ratings SVF730MJ SVF730F 400 ±30 6 3.79 24 79 33 0.63 0.26 28...