SVF12N65RF

Silan Microelectronics SVF12N65RF(FJH)_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 1 23 TO-220FJH-3L TO-220F-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH: TO-220FJH; F:TO-220F Version Nominal current, using 1 or 2 digits. Example: 4 denotes 4A N denotes N channel Nominal voltage, using 2 digits. Example: 60 denotes 600V ORDERING INFORMATION Part No. SVF12N65RFJH SVF12N65RF Package TO-220FJH-3L TO-220F-3L Marking 12N65RFJH SVF12N65RF Hazardous Substance Control Halogen free Halogen free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.1 Page 1 of 8 Silan Microelectronics SVF12N65RF(FJH)_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage Gate-Sou...