SVS11N60D/F/S/FJ/T/KD2_Datasheet
11A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N60D/F/S/FJ/T/KD2 is an N-channel ...
SVS11N60D/F/S/FJ/T/KD2_Datasheet
11A, 600V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
11A,600V, RDS(on)(typ.)=0.3@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
ORDERING INFORMATION
Part No.
SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11N60FJD2 SVS11N60TD2 SVS11N60KD2
Package
TO-252-2L TO-220F-3L TO-263-2L TO-263-2L TO-220FJ-3L TO-220-3L TO-262-3L
Marking
11N60DD2 11N60FD2 11N60SD2 11N60SD2 11N60FJD2 11N60TD2 11N60KD2
Hazardous Substance Control
Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free
Packing
Tape & Reel Tube Tube
Tape & Reel Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0 Page 1 of 11
SVS11N60D/F/S/FJ/T/KD2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation (TC=25C) - Derate above 25C
Single Pulsed Aval...