SVS11N60KD2

SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A,600V, RDS(on)(typ.)=0.3@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11N60FJD2 SVS11N60TD2 SVS11N60KD2 Package TO-252-2L TO-220F-3L TO-263-2L TO-263-2L TO-220FJ-3L TO-220-3L TO-262-3L Marking 11N60DD2 11N60FD2 11N60SD2 11N60SD2 11N60FJD2 11N60TD2 11N60KD2 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Packing Tape & Reel Tube Tube Tape & Reel Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.0 Page 1 of 11 SVS11N60D/F/S/FJ/T/KD2_Datasheet ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Aval...