SVF3N80MN

SVF3N80M/MJ/F/D/T/MN_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/MJ/F/D/T/MN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  3A,800V,RDS(on)(typ.)=3.8@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1.Gate 1 23 TO-251J-3L 3 2.Drain 3.Source TO-252-2L 1 23 TO-251D-3L TO-251N-3L 123 TO-220-3L TO-220F-3L ORDERING INFORMATION Part No. SVF3N80MJ SVF3N80M SVF3N80T SVF3N80F SVF3N80DTR SVF3N80MN Package TO-251J-3L TO-251D-3L TO-220-3L TO-220F-3L TO-252-2L TO-251N-3L Marking SVF3N80MJ SVF3N80M SVF3N80T SVF3N80F SVF3N80D 3N80MN Hazardous Substance Control Halogen free Halogen free Pb free Pb free Halogen free Halogen free Packing Tube Tube Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.2 Page 1 of 12 SVF3N80M/MJ/F/D/T/MN_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25C Drain Current TC=100C Drain Current Pulsed Power Dissipation(TC...