POWER TRANSISTOR. SVS12N80S Datasheet

SVS12N80S TRANSISTOR. Datasheet pdf. Equivalent


Silan Microelectronics SVS12N80S
Silan
Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
12A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
12A,800V, RDS(on)(typ.)=0.37@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
2
1 12 3
3
1.Gate 2.Drain 3.Source TO-220FJ-3L
12 3
12 3
TO-220FJH-3L
TO-3P
12 3
TO-220F-3L
1
3
TO-263-2L
NOMENCLATURE
Silan DPMOS Code of D-
Well process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A
N denotes N Channel
SVSXNXXXDX
Process breakdown logo
default: first generation process
D2: second generation process;
D3: third generation process
Packageinformation.Examp:F:TO-220F.
Nominal Voltage,using 2 digits
Example:60 denotes 600V,65 denotes 650V.
ORDERING INFORMATION
Part No.
SVS12N80F
SVS12N80FJ
SVS12N80S
SVS12N80STR
SVS12N80FJH
SVS12N80PN
Package
TO-220F-3L
TO-220FJ-3L
TO-263-2L
TO-263-2L
TO-220FJH-3L
TO-3P
Marking
SVS12N80F
SVS12N80FJ
SVS12N80S
SVS12N80S
12N80FJH
12N80
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tube
Tape&Reel
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 1 of 10


SVS12N80S Datasheet
Recommendation SVS12N80S Datasheet
Part SVS12N80S
Description 800V DP MOS POWER TRANSISTOR
Feature SVS12N80S; Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPT.
Manufacture Silan Microelectronics
Datasheet
Download SVS12N80S Datasheet




Silan Microelectronics SVS12N80S
Silan
Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Ratings
Symbol
SVS12N80F/FJ/FJH SVS12N80S SVS12N80PN
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Body diode (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
800
±30
12
7.7
48
40 150
0.32 1.20
702
15
50
-55+150
-55+150
169
1.35
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVS12N80F/FJ/FJH SVS12N80S
3.13 0.83
62.5 62.5
SVS12N80PN
0.74
50
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 2 of 10



Silan Microelectronics SVS12N80S
Silan
Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=6A
f=1.0MHz
f=1MHz,VGS=0V,
VDS=100V
VDD=400V, VGS=10V, RG=24Ω,
ID=12A
(Note 4,5)
VDD=640V, VGS=10V,
ID=12A
(Note 4,5)
Min.
800
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=12A,VGS=0V
Reverse Recovery Time
Trr IS=12A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note 4)
Notes:
1. L=79mH,IAS=4.0A,VDD=100V, RG=25, starting TJ=25C;
2. VDS=0~400V, ISD<=12A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.37
3.8
1090
55
8.7
21
45
171
43
52
7.6
31
Max.
--
1.0
±100
4.0
0.45
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
430
6.5
Max.
12
48
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 3 of 10







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