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Silan Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
12A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
12A,800V, RDS(on)(typ.)=0.37@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
2
1 12 3 3
1.Gate 2.Drain 3.Source TO-220FJ-3L
12 3
12 3
TO-220FJH-3L
TO-3P
12 3 TO-220F-3L
1 3
TO-263-2L
NOMENCLATURE
Silan DPMOS Code of DWell process
Nominal current,using 1 or 2 digits: Example:4 denotes 4A
N denotes N Channel
SVSXNXXXDX
Process breakdown logo default: first generation process D2: second generation process;
D3: third generation process
Packageinformation.Examp:F:TO-220F.
Nominal Voltage,using 2 digits Example:60 denotes 600V,65 denotes 650V.
ORDERING INFORMATION
Part No.
SVS12N80F SVS12N80FJ SVS12N80S SVS12N80STR SVS12N80FJH SVS12N80PN
Package
TO-220F-3L TO-220FJ-3L
TO-263-2L TO-263-2L TO-220FJH-3L
TO-3P
Marking
SVS12N80F SVS12N80FJ SVS12N80S SVS12N80S
12N80FJH 12N80
Hazardous Substance Control
Halogen free Halogen free Halogen free Halogen free Halogen free
Pb free
Packing
Tube Tube Tube Tape&Reel Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6 Page 1 of 10
Silan Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Ratings Symbol
SVS12N80F/FJ/FJH SVS12N80S SVS12N80PN
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C) - Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Body diode (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS dv/dt dv/dt
TJ Tstg
800 ±30 12 7.7 48 40 150 0.32 1.20 702 15 50 -55~+150 -55~+150
169 1.35
Unit
V V
A
A W W/C mJ V/ns V/ns C C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
RθJC RθJA
Ratings SVS12N80F/FJ/FJH SVS12N80S
3.13 0.83 62.5 62.5
SVS12N80PN 0.74 50
Unit
C/W C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6 Page 2 of 10
Silan Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current
Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS
IDSS IGSS VGS(th)
RDS(on)
Rg Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
VGS=10V, ID=6A
f=1.0MHz
f=1MHz,VGS=0V, VDS=100V
VDD=400V, VGS=10V, RG=24Ω, ID=12A
(Note 4,5) VDD=640V, VGS=10V, ID=12A
(Note 4,5)
Min. 800
--2.0
--
------------
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=12A,VGS=0V
Reverse Recovery Time
Trr IS=12A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note 4)
Notes:
1. L=79mH,IAS=4.0A,VDD=100V, RG=25, starting TJ=25C; 2. VDS=0~400V, ISD<=12A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min. ------
Typ. -----
0.37
3.8 1090
55 8.7 21 45 171 43 52 7.6 31
Max. -1.0
±100 4.0
0.45
------------
Typ. ----
430 6.5
Max. 12 48 1.4 ---
Unit V µA nA V pF
ns
nC
Unit A V ns µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6 Page 3 of 10
Silan Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
TYPICAL CHARACTERISTICS
Drain Current – ID(A)
Drain-Source On-Resistance – RDSON)(Ω)
Figure 1. On-Region Characteristics
100 10
VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V
VGS=10V VGS=15V
1
0.1 0.1
Notes: 1.250µS pulse test 2.TC=25°C
1 10 100
Drain-Source Voltage – VDS(V)
Figure 3. On-Resitance Variation vs. Drain Current
0.50
0.45
VGS=10V VGS=20V
0.40
0.35 0.30
0
Note: TJ=25°C
5 10 15 Drain Current – ID(A)
20
10000 9000 8000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
7000
6000 5000 4000 3000 2.