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SVS12N80FJH Dataheets PDF



Part Number SVS12N80FJH
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 800V DP MOS POWER TRANSISTOR
Datasheet SVS12N80FJH DatasheetSVS12N80FJH Datasheet (PDF)

Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topolo.

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A,800V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L NOMENCLATURE Silan DPMOS Code of DWell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel SVSXNXXXDX Process breakdown logo default: first generation process D2: second generation process; D3: third generation process Packageinformation.Examp:F:TO-220F. Nominal Voltage,using 2 digits Example:60 denotes 600V,65 denotes 650V. ORDERING INFORMATION Part No. SVS12N80F SVS12N80FJ SVS12N80S SVS12N80STR SVS12N80FJH SVS12N80PN Package TO-220F-3L TO-220FJ-3L TO-263-2L TO-263-2L TO-220FJH-3L TO-3P Marking SVS12N80F SVS12N80FJ SVS12N80S SVS12N80S 12N80FJH 12N80 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Pb free Packing Tube Tube Tube Tape&Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.6 Page 1 of 10 Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Ratings Symbol SVS12N80F/FJ/FJH SVS12N80S SVS12N80PN Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note 1) Body diode (Note 2) MOSFET dv/dt ruggedness (Note 3) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS dv/dt dv/dt TJ Tstg 800 ±30 12 7.7 48 40 150 0.32 1.20 702 15 50 -55~+150 -55~+150 169 1.35 Unit V V A A W W/C mJ V/ns V/ns C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings SVS12N80F/FJ/FJH SVS12N80S 3.13 0.83 62.5 62.5 SVS12N80PN 0.74 50 Unit C/W C/W HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.6 Page 2 of 10 Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Rg Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=6A f=1.0MHz f=1MHz,VGS=0V, VDS=100V VDD=400V, VGS=10V, RG=24Ω, ID=12A (Note 4,5) VDD=640V, VGS=10V, ID=12A (Note 4,5) Min. 800 --2.0 -- ------------ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current IS Integral Reverse P-N Junction Pulsed Source Current ISM Diode in the MOSFET Diode Forward Voltage VSD IS=12A,VGS=0V Reverse Recovery Time Trr IS=12A,VGS=0V, Reverse Recovery Charge Qrr dIF/dt=100A/µs (Note 4) Notes: 1. L=79mH,IAS=4.0A,VDD=100V, RG=25, starting TJ=25C; 2. VDS=0~400V, ISD<=12A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 5. Essentially independent of operating temperature. Min. ------ Typ. ----- 0.37 3.8 1090 55 8.7 21 45 171 43 52 7.6 31 Max. -1.0 ±100 4.0 0.45 ------------ Typ. ---- 430 6.5 Max. 12 48 1.4 --- Unit V µA nA V   pF ns nC Unit A V ns µC HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.6 Page 3 of 10 Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet TYPICAL CHARACTERISTICS Drain Current – ID(A) Drain-Source On-Resistance – RDSON)(Ω) Figure 1. On-Region Characteristics 100 10 VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=10V VGS=15V 1 0.1 0.1 Notes: 1.250µS pulse test 2.TC=25°C 1 10 100 Drain-Source Voltage – VDS(V) Figure 3. On-Resitance Variation vs. Drain Current 0.50 0.45 VGS=10V VGS=20V 0.40 0.35 0.30 0 Note: TJ=25°C 5 10 15 Drain Current – ID(A) 20 10000 9000 8000 Figure 5. Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 7000 6000 5000 4000 3000 2.


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