STOP IGBT. SGTP5T60SD1F Datasheet

SGTP5T60SD1F IGBT. Datasheet pdf. Equivalent

SGTP5T60SD1F Datasheet
Recommendation SGTP5T60SD1F Datasheet
Part SGTP5T60SD1F
Description 600V FIELD STOP IGBT
Feature SGTP5T60SD1F; Silan Microelectronics SGTP5T60SD1D/F/S_Datasheet 5A, 600V FIELD STOP IGBT DESCRIPTION The SGTP5T6.
Manufacture Silan Semiconductors
Datasheet
Download SGTP5T60SD1F Datasheet




Silan Semiconductors SGTP5T60SD1F
Silan
Microelectronics
SGTP5T60SD1D/F/S_Datasheet
5A, 600V FIELD STOP IGBT
DESCRIPTION
The SGTP5T60SD1D/F/S field stop IGBT features low conduction loss
and switching loss, is applicable to UPS, SMPS, and PFC fields.
FEATURES
5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A
Low conduction loss
Fast switching
High input impedance
C
2
1
G
3
E
1
3
12 3
TO-220F-3L
1
3
TO-263-2L
NOMENCLATURE
IGBT series
Technical grade
Current, 70: 70A
N : N Channel
NE : N-channel planar
gate with ESD
T : Field Stop 3/4
U : Field Stop 4+
V : Field Stop 5
W: Field Stop 6
X : Field Stop 7
SGT P 5 T 60 S D X 1 D
Voltage, 65: 650V
120: 1200V
Package
D : TO-252
1,2,3: Version No.
Blank: Standard diode
M : Standard Diode, full range
R : Rapid Diode
B : Rapid Diode, full range
S : Soft Diode, full range
D : Packaged with fast recovery diode
R : RC IGBT
L :Ultra low saturation voltage, f<2KHz
Q : Low saturation voltage, f=2~20KHz
S : Standard, f=20~30KHz
F : Fast switching, f=30~100KHz
UF : Ultra fast switching, f>100KHz
ORDERING INFORMATION
Part No.
SGTP5T60SD1DTR
SGTP5T60SD1F
SGTP5T60SD1S
SGTP5T60SD1STR
Package
TO-252-2L
TO-220F-3L
TO-263-2L
TO-263-2L
Marking
P5T60SD1
P5T60SD1
P5T60SD1S
P5T60SD1S
Hazardous
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tape&Reel
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 10



Silan Semiconductors SGTP5T60SD1F
Silan
Microelectronics
SGTP5T60SD1D/F/S_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25C
TC=100C
Pulsed Collector Current
Diode current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
IF
PD
TJ
Tstg
SGTP5T60SD1
D
82
Ratings
SGTP5T60SD1
F
600
±30
10
5
15
10
35
-55+150
-55+150
SGTP5T60SD1
S
83
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance,
Junction to Case (IGBT)
Thermal Resistance,
Junction to Case (FRD)
Symbol
RθJC
SGTP5T60SD1
D
Ratings
SGTP5T60SD1
F
SGTP5T60SD1
S
1.51
3.6
1.5
RθJC
2.14
3.7
2.6
Units
V
V
A
A
A
W
C
C
Units
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 10



Silan Semiconductors SGTP5T60SD1F
Silan
Microelectronics
SGTP5T60SD1D/F/S_Datasheet
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Breakdown Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Symbol
Test conditions
BVCE VGE=0V, IC=250uA
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Est
Qg
Qge
Qgc
VCE=600V, VGE=0V
VGE=20V, VCE=0V
IC=250uA, VCE=VGE
IC=5A, VGE=15V
IC=5A, VGE=15V, TC=125C
VCE=30V
VGE=0V
f=1MHz
VCE=400V
IC=5A
Rg=10Ω
VGE=15V
Inductive Load
VCE = 400V, IC=5A, VGE =
15V
Min.
600
--
--
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
5.5
1.5
1.7
340
26
7.6
7
14
18
145
0.2
0.07
0.27
18.5
5.1
8.6
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test conditions
Min.
Typ.
Diode Forward Voltage
VFM IF=5A, TC=25C
IF=5A, TC=125C
Diode Reverse Recovery Time
Trr IES=5A, dIES/dt=200A/μs
Diode Reverse Recovery Charge Qrr IES=5A, dIES/dt=200A/μs
-- 1.3
-- 1.1
-- 40
-- 80
Max.
--
200
±400
6.5
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.8
--
--
--
Units
V
uA
nA
V
V
V
pF
ns
mJ
nC
Units
V
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 3 of 10







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)