1200V IGBT. SGT40T120FD3P7 Datasheet

SGT40T120FD3P7 IGBT. Datasheet pdf. Equivalent


Silan SGT40T120FD3P7
Silan
Microelectronics
SGT40T120FD3P7_Datasheet
40A, 1200V IGBT
DESCRIPTION
The SGT40T120FD3P7 IGBT is fabricated using Silan 4rd generation of
trench field stop technology, features low conduction loss and switching
loss, positive temperature coefficient for easy parallel operation. This
device is applicable to induction heating, UPS, SMPS, and PFC fields.
FEATURES
40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A
Low conduction loss
Ultra fast switching
High breakdown voltage
NOMENCLATURE
1
G
C
2
3
E
12 3
TO-247-3L
IGBT series
Current, 70: 70A
N : N Channel
NE : N-channel planar
gate with ESD
T : Field Stop 3/4
U : Field Stop 4+
V : Field Stop 5
W: Field Stop 6
X : Field Stop 7
Voltage, 65: 650V
120: 1200V
SGT 40 T 120 F D 3 P7
ORDERING INFORMATION
Part No.
Package
SGT40T120FD3P7
TO-247-3L
Marking
40T120FD3
Package
P7 : TO-247-3L
1,2,3: Version No.
Blank: Standard diode
M : Standard Diode, full range
R : Rapid Diode
B : Rapid Diode, full range
S : Soft Diode, full range
D : Packaged with fast recovery diode
R : RC IGBT
L : Ultra low switchingrecommended frequency ~2KHz
Q : Low switchingrecommended frequency2~20KHz
S : Standard frequency recommended frequency5~40KHz
F : Fast switchingrecommended frequency10~60KHz
UF : Ultra fast switchingrecommended frequency 40KHz~
Hazardous substance control
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 8


SGT40T120FD3P7 Datasheet
Recommendation SGT40T120FD3P7 Datasheet
Part SGT40T120FD3P7
Description 1200V IGBT
Feature SGT40T120FD3P7; Silan Microelectronics SGT40T120FD3P7_Datasheet 40A, 1200V IGBT DESCRIPTION The SGT40T120FD3P7 IG.
Manufacture Silan
Datasheet
Download SGT40T120FD3P7 Datasheet




Silan SGT40T120FD3P7
Silan
Microelectronics
SGT40T120FD3P7_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25C
TC=100C
Pulsed Collector Current
Power Dissipation (TC=25C)
-Derate above 25C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
PD
TJ
Tstg
Ratings
1200
±20
80
40
120
360
2.88
-55+150
-55+150
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (FRD)
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJC
RθJA
Ratings
0.26
1.3
40
Units
V
V
A
A
W
W/C
C
C
Units
C/W
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 8



Silan SGT40T120FD3P7
Silan
Microelectronics
SGT40T120FD3P7_Datasheet
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Breakdown Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Symbol
Test conditions
BVCE VGE=0V,IC=1mA
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Est
Qg
Qge
Qgc
VCE=1200V,VGE=0V
VGE=20V,VCE=0V
IC=1.0mA,VCE=VGE
IC=40A,VGE=15V
IC=40A,VGE=15V, TC=125C
VCE=30V
VGE=0V
f=1MHz
VCE=600V
IC=40A
Rg=10Ω
VGE=15V
Inductive Load
VCE = 600V, IC=40A,
VGE = 15V
Min.
1200
--
--
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
6.0
2.3
2.6
5700
170
93
55
125
240
140
4.8
1.5
6.3
260
60
132
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test conditions
Min.
Typ.
Diode Forward Voltage
Vfm IF =10A TC=25C
IF = 10A TC=125C
Diode Reverse Recovery Time
Trr IES =10A, dIES/dt = 200A/μs
Diode Reverse Recovery Charge Qrr IES =10A, dIES/dt = 200A/μs
-- 2.5
-- 2.0
-- 88
-- 0.35
Max. Units
--
500
±400
7.5
2.8
--
--
--
--
--
--
--
--
--
--
--
--
--
--
V
μA
nA
V
V
V
pF
ns
mJ
nC
Max.
3.1
--
--
--
Units
V
ns
μC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 3 of 8







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