SVF840MJ

SVF840F/D/S/MJ_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840F/D/S/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 1 3 TO-252-2L FEATURES  8A, 500V, RDS(on)(typ.)=0.68@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVF840F SVF840DTR SVF840S SVF840STR SVF840MJ Package TO-220F-3L TO-252-2L TO-263-2L TO-263-2L TO-251J-3L Marking SVF840F SVF840D SVF840S SVF840S SVF840MJ Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Halogen free Packing Tube Tape & Reel Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 1 of 11 SVF840F/D/S/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC = 25°C TC = 100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energ(Note 1) Operation...