N-CHANNEL MOSFET. SVF840MJ Datasheet

SVF840MJ MOSFET. Datasheet pdf. Equivalent


Silan Microelectronics SVF840MJ
SVF840F/D/S/MJ_Datasheet
8A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF840F/D/S/MJ is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary F-CellTM
high-voltage planar VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
2
1
3
1.Gate 2.Drain 3.Source
1
3
TO-263-2L
1
3
TO-252-2L
FEATURES
8A, 500V, RDS(on)(typ.)=0.68@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No.
SVF840F
SVF840DTR
SVF840S
SVF840STR
SVF840MJ
Package
TO-220F-3L
TO-252-2L
TO-263-2L
TO-263-2L
TO-251J-3L
Marking
SVF840F
SVF840D
SVF840S
SVF840S
SVF840MJ
Hazardous
Substance Control
Pb free
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape & Reel
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 1 of 11


SVF840MJ Datasheet
Recommendation SVF840MJ Datasheet
Part SVF840MJ
Description 500V N-CHANNEL MOSFET
Feature SVF840MJ; SVF840F/D/S/MJ_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840F/D/S/MJ is an N-chan.
Manufacture Silan Microelectronics
Datasheet
Download SVF840MJ Datasheet




Silan Microelectronics SVF840MJ
SVF840F/D/S/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC = 25°C
TC = 100°C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energ(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF840F
49
0.39
Ratings
SVF840D SVF840S
500
±30
8
5
32
130 131
1.04 1.05
511.6
-55+150
-55+150
SVF840MJ
120
0.96
Unit
V
V
A
A
W
W/C
mJ
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance,
Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
Symbol
SVF840F
Ratings
SVF840D SVF840S
SVF840MJ
Unit
RθJC
2.56
0.96
0.95
1.04 C/W
RθJA
62.5
62.0
110
62 C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 2 of 11



Silan Microelectronics SVF840MJ
SVF840F/D/S/MJ_Datasheet
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Drain –Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=500V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=4.0A
VDS=25V,VGS=0V, f=1.0MHZ
VDD=250V,ID=8.0A, RG=25
(Note 2,3)
VDS=400V,ID=8.0A, VGS=10V
(Note 2,3)
Min.
500
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N Junction
ISM Diode in the MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=8.0A,VGS=0V
Trr IS=8.0A,VGS=0V,
Qrr dIF/dt=100A/µS
(Note 2)
Notes:
1. L=30mH, IAS=5.3A, VDD=130V, RG=25Ω, starting TJ=25C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.68
904
120
2.69
29.2
59.6
41.3
29.2
14.7
5.6
4.4
Max.
--
1.0
±100
4.0
0.90
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
470.91
3.28
Max.
8.0
32.0
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 3 of 11







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