SVF4N60CAMJ

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  4A, 600V, RDS(on)(typ.)=2.0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel Package information. Example: F:TO-220F; K:TO-262; D:TO-252; MN:TO-251N; T:TO-220;MJ:TO-251J-3L. REV. Nominal Voltage,using 2 digits Example: 60 denotes 600V Special Features indication, May be omitted. Example: E denotes embeded ESD structure HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.1 Page 1 of 12 SVF4N60CAF/K/D/T/MN/MJ_Datasheet ORDERING INFORMATION Part No. SVF4N60CAF SVF4N60CAK SVF4N60CAT SVF4N60CADTR SVF4N60CAMN SVF4N60CAMJ Package TO-220F-3L TO-262-3L TO-220-3L TO-252-2L TO-251N-3L TO-251J-3L Marking SVF4N60CAF SVF4N60CAK SVF4N60CAT 4N60CAD 4N60CAMN 4N60CAMJ Hazardous Substance Control Halogen free Halogen free Pb free Ha...