N-Channel FET. FDS6986AS Datasheet

FDS6986AS FET. Datasheet pdf. Equivalent


ON Semiconductor FDS6986AS
FDS6986AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET
General Description
The FDS6986AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6986AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using ON Semiconductor’s monolithic SyncFET
technology.
Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
RDS(on) = 20 m@ VGS = 10V
RDS(on) = 28 m@ VGS = 4.5V
Q1: Optimized for low switching losses
Low gate charge (10 nC typical)
6.5A, 30V
RDS(on) = 29 m@ VGS = 10V
RDS(on) = 38 m@ VGS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986AS
FDS6986AS
FDS6986AS
FDS6986AS-NL (Note 4)
13”
13”
©2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Q2
5
6
7 Q1
8
4
3
2
1
Q2 Q1
30 30
±20 ±16
7.9 6.5
30 20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
40
Tape width
12mm
12mm
°C/W
°C/W
Quantity
2500 units
2500 units
Publication Order Number:
FDS6986AS/D


FDS6986AS Datasheet
Recommendation FDS6986AS Datasheet
Part FDS6986AS
Description Dual Notebook Power Supply N-Channel FET
Feature FDS6986AS; FDS6986AS FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ General Description.
Manufacture ON Semiconductor
Datasheet
Download FDS6986AS Datasheet




ON Semiconductor FDS6986AS
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
Q2 30
Q1 30
V
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
Q2
Q1
31 mV/°C
23
VDS = 24 V, VGS = 0 V
Q2
Q1
500 µA
1
VGS = ±20 V, VDS = 0 V
VGS = ±16 V, VDS = 0 V
Q2
Q1
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
Q2 1 1.7 3
Q1 1 1.9 3
V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
Q2
Q1
–3.2 mV/°C
–4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.9 A
VGS = 10 V, ID = 7.9 A, TJ = 125°C
VGS = 4.5 V, ID = 7 A
Q2
17 20 m
25 32
22 28
VGS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
Q1
21 29
32 49
32 38
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q2 30
Q1 20
A
gFS Forward Transconductance VDS = 5 V, ID = 7.9 A
VDS = 5 V, ID = 6.5 A
Q2 25
Q1 15
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15mV, f = 1.0 MHz
Q2 550
Q1 720
Q2 180
Q1 120
Q2 70
Q1 60
Q2 3.2
Q1 1.2
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time
tr Turn-On Rise Time
VDD = 15 V, ID = 1 A,
td(off) Turn-Off Delay Time
VGS = 10V, RGEN = 6
tf Turn-Off Fall Time
td(on) Turn-On Delay Time
tr Turn-On Rise Time
VDD = 15 V, ID = 1 A,
td(off) Turn-Off Delay Time
VGS = 4.5V, RGEN = 6
tf Turn-Off Fall Time
Q2 9 18 ns
Q1 10 19
Q2 6 12 ns
Q1 4 8
Q2 25 40 ns
Q1 24 39
Q2 4 8 ns
Q1 3 6
Q2 11 20 ns
Q1 10 20
Q2 15 26 ns
Q1 9 18
Q2 15 26 ns
Q1 13 23
Q2 6 12 ns
Q1 3 6
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ON Semiconductor FDS6986AS
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
Qg(TOT) Total Gate Charge, Vgs = 10V
Qg
Total Gate Charge, Vgs = 5V
Q2:
VDS = 15 V, ID = 7.9 A
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1:
VDS = 15 V, ID = 6.5 A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q2
Q1
Trr
Reverse Recovery Time
IF = 10 A,
Qrr
Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 3)
Q2
Trr
Reverse Recovery Time
IF = 6.5 A,
Qrr
Reverse Recovery Charge
diF/dt = 100 A/µs
(Note 3)
Q1
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
(Note 2)
Q2
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
Q1
10 14
12 17
5.6 8
6.5 9
2.0
2.3
1.5
2.1
3.0
1.3
15
6
20
12
0.6 0.7
0.8 1.2
nC
nC
nC
nC
A
ns
nC
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6986AS-NL is a lead free product. FDS6986AS-NL marking will appear on the reel label.
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