Dual N-Channel MOSFET
FDS6910
FDS6910
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs...
Description
FDS6910
FDS6910
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
7.5 A, 30 V.
RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5 6 Q1 7
Q2
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6910
FDS6910
13’’
Ratings
30 ± 20 7.5 20 1.6 1.0 0.9 –55 to +150
78 40
Tape width 12mm
Units
V V A
W
°C
°C/W °C/W
Quantity 2500 units
2004 Semiconductor Components Industries, LLC. September-2017, Rev. 2
Publi...
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