P-Channel MOSFET. FDS6975 Datasheet

FDS6975 MOSFET. Datasheet pdf. Equivalent


ON Semiconductor FDS6975
FDS6975
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These P-Channel Logic Level MOSFETs are
produced using ON Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V,
RDS(ON) = 0.045 @ VGS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
FD69S75
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
SOIC-16
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Ratings
-30
±20
-6
-20
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Publication Order Number:
FDS6975/D


FDS6975 Datasheet
Recommendation FDS6975 Datasheet
Part FDS6975
Description Dual P-Channel MOSFET
Feature FDS6975; FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel Logic.
Manufacture ON Semiconductor
Datasheet
Download FDS6975 Datasheet




ON Semiconductor FDS6975
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Min Typ Max Units
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
VGS = 0 V, I D = -250 µA
ID = -250 µA, Referenced to 25 oC
-30
-21
V
mV/oC
IDSS Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1 µA
TJ = 55°C
-10 µA
IGSSF Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = -20 V, VDS = 0 V
-100 nA
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
VGS = -10 V, I D = -6 A
-1 -1.7
-3
V
4 mV/oC
0.025 0.032
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
TJ =125°C
0.033 0.051
VGS = -4.5 V, I D = -5 A
0.034 0.045
VGS = -10 V, VDS = -5 V
-20
VDS = -10 V, I D = -6 A
16
A
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
1540
400
170
pF
pF
pF
tD(on) Turn - On Delay Time
VDS = -15 V, I D = -1 A
tr Turn - On Rise Time
VGEN = -10 V, RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
VDS = -10 V, I D = -6 A,
Qgs Gate-Source Charge
VGS= -5 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
13 24
22 35
47 75
18 30
14.5 20
4
5
ns
ns
ns
ns
nC
nC
nC
IS
VSD
Notes:
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.3 A (Note 2)
-0.73
-1.3
-1.2
A
V
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
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ON Semiconductor FDS6975
Typical Electrical Characteristics
30
VGS = -10V
-6.0V
24
-4.5V
18
-3.5V
12
-3.0V
6
0
01234
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
5
1.6
ID= -6A
1.4 VGS = -10V
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
30
V DS = -5.0V
24
18
TJ= -55° C
25° C
125° C
12
6
0
1.5 2 2.5 3 3.5 4 4.5
- VGS , GATE TO SOURCE VOLTAGE (V)
2.5
2 V GS = -3.5V
-4.0 V
1.5 -4.5 V
-5.5 V
-7.0 V
1 -10V
0.5
0
6 12 18 24
- ID , DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.1
0.08
I D = -3A
0.06
0.04
0.02
0
2
TA = 125° C
25° C
468
- VGS , GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10 VGS = 0V
TJ = 125° C
1
25° C
0.1 -55° C
0.01
0.001
0
0.3 0.6 0.9 1.2
- VSD , BODY DIODE FORWARD VOLTAGE (V)
1.5
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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