MOSFET Driver. LMG1020 Datasheet

LMG1020 Driver. Datasheet pdf. Equivalent


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LMG1020
SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018
LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width
Applications
1 Features
1 Low-Side, Ultra-Fast Gate Driver for GaN and
Silicon FETs
• 1 ns Minimum Input Pulse Width
• Up to 60 MHz Operation
• 2.5 ns Typical, 4.5 ns Maximum Propagation
Delay
• 400 ps Typical Rise and Fall Time
• 7-A Peak Source and 5-A Peak Sink Currents
• 5-V Supply Voltage
• UVLO and Overtemperature Protection
• 0.8 mm × 1.2 mm WCSP Package
2 Applications
• LiDAR
• Time-of-Flight Laser Drivers
• Facial Recognition
• Class-E Wireless Chargers
• VHF Resonant Power Converters
• GaN-Based Synchronous Rectifier
• Augmented Reality
3 Description
The LMG1020 device is a single, low-side driver
designed for driving GaN FETs and logic-level
MOSFETs in high-speed applications including
LiDAR, time-of-flight, facial recognition, and any
power converters involving low side drivers. The
design simplicity of the LMG1020 enables extremely
fast propagation delays of 2.5 nanoseconds and
minimum pulse width of 1 nanosecond. The drive
strength is independently adjustable for the pull-up
and pull-down edges by connecting external resistors
between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and
overtemperature protection (OTP) in the event of
overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020
minimizes gate loop inductance and maximizes
power density in high-frequency applications.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMG1020
WCSP (6)
0.80 mm × 1.20 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified LiDAR Driver Stage Diagram
+5 V
VDD
LMG1020
OUTH
R1
Vbus
PWM
EN
IN+
IN±
OUTL
R2
GaN
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


LMG1020 Datasheet
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Part LMG1020
Description Low-Side GaN and MOSFET Driver
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LMG1020
SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Typical Characteristics ............................................. 7
7 Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 8
7.3 Feature Description................................................... 8
7.4 Device Functional Modes.......................................... 9
8 Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application ................................................. 10
9 Power Supply Recommendations...................... 15
10 Layout................................................................... 16
10.1 Layout Guidelines ................................................. 16
10.2 Layout Example .................................................... 16
11 Device and Documentation Support ................. 18
11.1 Documentation Support ....................................... 18
11.2 Receiving Notification of Documentation Updates 18
11.3 Community Resources.......................................... 18
11.4 Trademarks ........................................................... 18
11.5 Electrostatic Discharge Caution ............................ 18
11.6 Glossary ................................................................ 18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
Changes from Original (June 2018) to Revision B
Page
• Changed Figure 1 input structure NAND gate to AND gate................................................................................................... 1
2 Submit Documentation Feedback
Product Folder Links: LMG1020
Copyright © 2018, Texas Instruments Incorporated



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5 Pin Configuration and Functions
YFF Package
6-Ball WCSP
Top View
LMG1020
SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018
NAME
GND
IN+
IN–
OUTL
OUTH
VDD
PIN
NO.
B1
C1
C2
B2
A2
A1
VDD
A1
OUTH
A2
GND
B1
OUTL
B2
IN+ IN-
C1 C2
0.8mm
Pin Functions
I/O DESCRIPTION
— Ground
I Positive logic-level input
I Negative logic-level input
O
Pulldown gate drive output. Connect through an optional resistor to the target transistor’s
gate
O Pullup gate drive output. Connect through a resistor to the target transistor’s gate
I Input voltage supply. Decouple through a small size, low inductance capacitor to GND
Copyright © 2018, Texas Instruments Incorporated
Product Folder Links: LMG1020
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