POWER AMPLIFIER. TPA6100A2 Datasheet

TPA6100A2 AMPLIFIER. Datasheet pdf. Equivalent


etcTI TPA6100A2
TPA6100A2D
www.ti.com
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
FEATURES
50-mW Stereo Output
Low Supply Current . . . 0.75 mA
Low Shutdown Current . . . 50 nA
Pin Compatible With LM4881 and TPA102 (1)
Pop Reduction Circuitry
Internal Midrail Generation
Thermal and Short-Circuit Protection
Surface-Mount Packaging
– MSOP and SOIC
1.6-V to 3.6-V Supply Voltage Range
(1) The polarity of the SHUTDOWN pin is reversed.
D PACKAGE
(TOP VIEW)
BYPASS
GND
SHUTDOWN
IN2–
1
2
3
4
8 IN1–
7 VO1
6 VDD
5 VO2
DGK PACKAGE
(TOP VIEW)
BYPASS
GND
SHUTDOWN
IN2–
1
2
3
4
8 IN1–
7 VO1
6 VDD
5 VO2
DESCRIPTION
The TPA6100A2D is a stereo audio power amplifier packaged in either an 8-pin SOIC package or an 8-pin
MSOP package capable of delivering 50 mW of continuous RMS power per channel into 16-loads. Amplifier
gain is externally configured by a means of three resistors per input channel and does not require external
compensation for settings of 1 to 10.
The TPA6100A2D is optimized for battery applications because of its low supply current, shutdown current, and
THD+N. To obtain the low-supply voltage range, the TPA6100A2D biases BYPASS to VDD/4. A resistor with a
resistance equal to RF must be added from the inputs to ground to allow the output to be biased at VDD/2.
When driving a 16-load with 45-mW output power from 3.3 V, THD+N is 0.04% at 1 kHz, and less than 0.2%
across the audio band of 20 Hz to 20 kHz. For 28 mW into 32-loads, the THD+N is reduced to less than 0.03%
at 1 kHz, and is less than 0.2% across the audio band of 20 Hz to 20 kHz.
TYPICAL APPLICATION CIRCUIT
Audio
Input
RI
CI
RF
8 IN 1−
R
1 BYPASS
Audio
Input
CB
RI
4 IN 2−
CI R
From Shutdown
Control Circuit
3 SHUTDOWN
RF
VDD/4
+
VDD 6
VO1 7
VO2 5
+
Bias
Control
2
CC
CC
VDD
CS
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2004, Texas Instruments Incorporated


TPA6100A2 Datasheet
Recommendation TPA6100A2 Datasheet
Part TPA6100A2
Description 50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
Feature TPA6100A2; TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 50-mW ULTRALOW VOLTAGE STEREO.
Manufacture etcTI
Datasheet
Download TPA6100A2 Datasheet




etcTI TPA6100A2
TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
TA
–40°C to 85°C
AVAILABLE OPTIONS
PACKAGED DEVICE
SMALL OUTLINE (D)
MSOP(DGK)
TPA6100A2D
TPA6100A2DGK
MSOP
SYMBOLIZATION
AJL
TERMINAL
NAME
NO.
BYPASS
1
GND
IN1-
IN2-
SHUTDOWN
VDD
VO1
VO2
2
8
4
3
6
7
5
Terminal Functions
I/O DESCRIPTION
I Tap to voltage divider for internal mid-supply bias supply. BYPASS is set at VDD/4. Connect to a 0.1-µF
to 1-µF low-ESR capacitor for best performance.
I GND is the ground connection.
I IN1- is the inverting input for channel 1.
I IN2- is the inverting input for channel 2.
I Active-low input. When held low, the device is placed in a low supply current mode.
I VDD is the supply voltage terminal.
O VO1 is the audio output for channel 1.
O VO2 is the audio output for channel 2.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)(1)
VDD Supply voltage
VI Input voltage
Continuous total power dissipation
TJ Operating junction temperature range
Tstg Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
UNIT
4V
–0.3 V to VDD + 0.3 V
Internally limited
–40°C to 150°C
–65°C to 150°C
260°C
(1) Stresses beyond thoselisted under "absolute maximum ratings” may cause permanent damage to thedevice. These are stress ratings
only, and functional operation of the deviceat these or any other conditions beyond those indicated under "recommendedoperating
conditions” is not implied. Exposure to absolute-maximum-ratedconditions for extended periods may affect devicereliability.
PACKAGE
D
DGK
DISSIPATION RATING TABLE
TA 25°C
POWER RATING
710 mW
469 mW
DERATING FACTOR
ABOVE TA = 25°C
5.68 mW/°C
3.75 mW/°C
TA = 70°C
POWER RATING
454 mW
300 mW
TA = 85°C
POWER RATING
369 mW
244 mW
RECOMMENDED OPERATING CONDITIONS
VDD Supply voltage
TA Operating free-air temperature
VIH High-level input voltage
VIL Low-level input voltage
SHUTDOWN
SHUTDOWN
MIN MAX
1.6 3.6
–40 85
0.6 x VDD
0.25 x VDD
UNIT
V
°C
V
2



etcTI TPA6100A2
www.ti.com
DC ELECTRICAL CHARACTERISTICS
at TA = 25°C, VDD = 3.6 V (Unless otherwise noted)
PARAMETER
VOO
PSRR
Output offset voltage
Power supply rejection ratio
IDD
IDD(SD)
|IIH|
|IIL|
ZI
Supply current
Supply current in SHUTDOWN mode
High-level input current (SHUTDOWN)
Low-level input current (SHUTDOWN)
Input impedance (IN1-, IN2-)
AC OPERATING CHARACTERISTICS
VDD = 3.3 V, TA = 25°C, RL = 16
PARAMETER
PO Output power (each channel)
THD+N Total harmonic distortion + noise
BOM
kSVR
SNR
Maximum output power BW
Supply ripple rejection
Signal-to-noise ratio
Vn Noise output voltage (no noise-weighting filter)
AC OPERATING CHARACTERISTICS
VDD = 3.3 V, TA = 25°C, RL = 32
PARAMETER
PO Output power (each channel)
THD+N Total harmonic distortion + noise
BOM
kSVR
SNR
Maximum output power BW
Supply ripple rejection
Signal-to-noise ratio
Vn Noise output voltage (no noise-weighting filter)
TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
TEST CONDITIONS
AV = 2 V/V
VDD = 3.0 V to 3.6 V
SHUTDOWN = 3.6 V
SHUTDOWN = 0 V
VDD = 3.6 V, VI = VDD
VDD = 3.6 V, VI = 0 V
MIN TYP MAX UNIT
5 40 mV
72 dB
0.75 2.0 mA
50 250 nA
1 µA
1 µA
> 1 M
TEST CONDITIONS
THD 0.1%, f = 1 kHz
PO = 45 mW, 20 Hz–20 kHz
G = 1, THD < 0.5%
f = 1 kHz
PO = 50 mW
MIN TYP MAX UNIT
50 mW
0.2%
> 20 kHz
52 dB
90 dB
28 µV(rms)
TEST CONDITIONS
THD 0.1%, f = 1 kHz
PO = 30 mW, 20 Hz–20 kHz
G = 1, THD < 0.2%
f = 1 kHz
PO = 35 mW
MIN TYP MAX UNIT
35 mW
0.2%
> 20
kHz
52 dB
91 dB
28 µV(rms)
3







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