MTB060P06I3

CYStech Electronics Corp. Spec. No. : C796I3 Issued Date : 2019.03.25 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB060P06I3 BVDSS -60V ID@ VGS=-10V, TC=25C -16.7A RDSON@VGS=-10V, ID=-8A 57mΩ(typ.) Features  Low Gate Charge  Simple Drive Requirement  Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ.) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB060P06I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796I3 Issued Date : 2019.03.25 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TC=25C Continuous Drain Current @ VGS=-10V, TC=100C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-24A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ VDS VGS -60 ±20 -16.7 ID -10.6 IDM -57 IAS -24 EAS 28.8 36 PD 14.4 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 100% UIS testing in condition...