N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C441E3 Issued Date : 2010.08.13 Revised Date : 2019.07.31 Page No. : 1/8
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C441E3 Issued Date : 2010.08.13 Revised Date : 2019.07.31 Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB06N03E3
BVDSS ID @VGS=10V, TC=25C
VGS=10V, ID=30A RDSON(TYP)
VGS=4.5V, ID=24A
30V 102A 4 mΩ 5 mΩ
Features
Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package
Symbol
MTB06N03E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTB06N03E3-0-UB-X
Package
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name
MTB06N03E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V, TC=25C Continuous Drain Current @VGS=10V, TC=100C
ID
Pulsed Drain Current
IDM
Avalanche Current @ L=0.1mH
IAS
Avalanche Energy
L=2mH, ID=16A, VDD=25V * 2
EAS
Repetitive Avalanche Energy Total Power Dissipation
L=0.05mH TC=25°C TC=100°C
EAR PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. 100% tested by conditions of L=0.1mH, ID=16A, VGS=10V, VDD=15V
Spec. No. : C441E3 Issued Date : 2010.08.1...
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