Planar Transistors. HBNP2227S6R Datasheet

HBNP2227S6R Transistors. Datasheet pdf. Equivalent

HBNP2227S6R Datasheet
Recommendation HBNP2227S6R Datasheet
Part HBNP2227S6R
Description General Purpose NPN / PNP Epitaxial Planar Transistors
Feature HBNP2227S6R; CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2018.02.13 Pa.
Manufacture CYStech
Datasheet
Download HBNP2227S6R Datasheet




CYStech HBNP2227S6R
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2018.02.13
Page No. : 1/8
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP2227S6R
Features
Includes a PN2222A chip and PN2907A chip in a SOT-363R package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free lead plating package.
Equivalent Circuit
HBNP2227S6R
Outline
SOT-363R
Ordering Information
Device
HBNP2227S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP2227S6R
CYStek Product Specification



CYStech HBNP2227S6R
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2018.02.13
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
75 -60
40 -60
6 -5
600 -600
200(total) *1
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
hFE
hFE
75
40
6
-
-
-
-
-
0.6
-
35
50
hFE 75
*hFE
*hFE
*hFE
fT
Cob
100
35
40
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
0.3
1.0
1.2
2.0
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=60V
VCE=60V,VEB=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100μA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP2227S6R
CYStek Product Specification



CYStech HBNP2227S6R
TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
hFE
hFE
hFE
*hFE
*hFE
fT
Cob
-60
-60
-5
-
-
-
-
-
-
-
75
100
100
100
50
200
-
CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2018.02.13
Page No. : 3/8
Typ. Max. Unit
Test Conditions
- - V IC=-10μA
- - V IC=-10mA
- - V IE=-10μA
- -10 nA VCB=-50V
- -50 nA VCE=-30V,VEB=-0.5V
- -10 nA VEB=-3V
- -0.4 V IC=-150mA, IB=-15mA
- -1.6 V IC=-500mA, IB=-50mA
- -1.3 V IC=-150mA, IB=-15mA
- -2.6 V IC=-500mA, IB=-50mA
- - - VCE=-10V, IC=-100μA
- - - VCE=-10V, IC=-1mA
- - - VCE=-10V, IC=-10mA
- 300 - VCE=-10V, IC=-150mA
- - - VCE=-10V, IC=-500mA
- - MHz VCE=-20V, IC=-50mA, f=100MHz
- 8 pF VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
HBNP2227S6R
CYStek Product Specification







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