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VSMY98545

Vishay

High Power Infrared Emitting Diode

www.vishay.com VSMY98545 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ...


Vishay

VSMY98545

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Description
www.vishay.com VSMY98545 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLightTM portfolio, the VSMY98545 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1.5 A. FEATURES Package type: surface mount Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 45° Low forward voltage Designed for high drive currents: up to 1.5 A (DC) and up to 5 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Infrared illumination for CMOS cameras (CCTV) Illumination for cameras (3D gaming) Machine vision Bio identification PRODUCT SUMMARY COMPONENT VSMY98545 Ie (mW/sr) 380 Note Test conditions see table “Basic Characteristics” ϕ (deg) ± 45 λp (nm) 850 tr (ns) 15 ORDERING INFORMATION ORDERING CODE VSMY98545 Note MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 600 pcs, 600 pcs/reel PACKAGE FORM High power wit...




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