High Power Infrared Emitting Diode
www.vishay.com
VSMY98545
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
...
Description
www.vishay.com
VSMY98545
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY98545 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1.5 A.
FEATURES Package type: surface mount Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 45° Low forward voltage Designed for high drive currents: up to 1.5 A (DC) and up
to 5 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Infrared illumination for CMOS cameras (CCTV) Illumination for cameras (3D gaming) Machine vision Bio identification
PRODUCT SUMMARY
COMPONENT VSMY98545
Ie (mW/sr) 380
Note Test conditions see table “Basic Characteristics”
ϕ (deg) ± 45
λp (nm) 850
tr (ns) 15
ORDERING INFORMATION
ORDERING CODE VSMY98545
Note MOQ: minimum order quantity
PACKAGING Tape and reel
REMARKS MOQ: 600 pcs, 600 pcs/reel
PACKAGE FORM High power wit...
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